EGP20G Fairchild Semiconductor, EGP20G Datasheet - Page 82

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EGP20G

Manufacturer Part Number
EGP20G
Description
DIODE FAST GPP 2A 400V DO-15
Manufacturer
Fairchild Semiconductor
Datasheets

Specifications of EGP20G

Voltage - Forward (vf) (max) @ If
1.25V @ 2A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
5µA @ 400V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
DO-204AC, DO-15, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
1.25 V
Recovery Time
50 ns
Forward Continuous Current
2 A @ Ta=55C
Max Surge Current
75 A
Reverse Current Ir
5 uA
Power Dissipation
3.15 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Bipolar Power Transistors – Darlington Transistors
Products
TO-126 NPN Configuration
KSD985
KSD986
KSD1692
BD675A
BD677A
KSE800
KSE801
MJE800
MJE801
BD679A
KSE802
KSE803
MJE802
MJE803
BD681
TO-126 PNP Configuration
KSB794
KSB795
KSB1149
BD676A
BD678A
KSE700
KSE701
MJE700
MJE701
BD680A
KSE702
KSE703
MJE702
MJE703
BD682
TO-220 NPN Configuration
TIP110
TIP111
I
C
1.5
1.5
1.5
1.5
3
4
4
4
4
4
4
4
4
4
4
4
4
3
4
4
4
4
4
4
4
4
4
4
4
4
2
2
(A)
V
CEO
100
100
100
100
60
80
45
60
60
60
60
60
80
80
80
80
80
60
80
45
60
60
60
60
60
80
80
80
80
80
60
80
(V) V
CBO
150
150
150
100
100
100
45
60
60
60
60
60
80
80
80
80
80
60
80
45
60
60
60
60
60
80
80
80
80
80
60
80
(V) V
EBO
8
8
8
5
5
5
5
5
5
5
5
5
5
5
5
8
8
8
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V)
P
C
10
10
15
14
14
14
14
14
14
14
14
14
14
14
14
10
10
15
14
14
14
14
14
14
14
14
14
14
14
14
50
50
(W)
2000
2000
2000
2000
2000
2000
Min
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
500
500
2-77
Discrete Power Products –
30000
30000
20000
30000
30000
20000
Max
h
FE
@I
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
C
1
1
2
2
2
2
2
2
2
1
1
2
2
2
2
2
2
2
2
2
(A) @V
Bold = New Products (introduced January 2003 or later)
CE
2
2
2
3
3
3
3
3
3
3
3
3
3
3
3
2
2
2
3
3
3
3
3
3
3
3
3
3
3
3
4
4
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
0.9
0.9
1.5
1.5
1.2
2.8
2.8
2.5
2.8
2.5
2.8
2.8
2.5
2.8
2.5
2.8
2.5
1.5
1.5
1.2
2.8
2.8
2.5
2.8
2.5
2.8
2.8
2.5
2.8
2.5
2.8
2.5
2.5
2.5
V
CE
(sat)
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
C
1
1
2
2
2
2
2
2
2
1
1
2
2
2
2
2
2
2
2
2
(A) @I
0.001
0.001
0.002
0.001
0.001
0.002
0.008
0.008
0.04
0.04
0.04
0.04
0.04
0.03
0.04
0.03
0.04
0.03
0.04
0.04
0.04
0.04
0.04
0.03
0.04
0.03
0.04
0.03
0.03
0.03
0.03
0.03
B
(A)

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