EGP20G Fairchild Semiconductor, EGP20G Datasheet - Page 68

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EGP20G

Manufacturer Part Number
EGP20G
Description
DIODE FAST GPP 2A 400V DO-15
Manufacturer
Fairchild Semiconductor
Datasheets

Specifications of EGP20G

Voltage - Forward (vf) (max) @ If
1.25V @ 2A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
5µA @ 400V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
DO-204AC, DO-15, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
1.25 V
Recovery Time
50 ns
Forward Continuous Current
2 A @ Ta=55C
Max Surge Current
75 A
Reverse Current Ir
5 uA
Power Dissipation
3.15 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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TO-220F (Continued)
FQPF6N80C
FQPF5N80
FQPF4N80
FQPF3N80C
FQPF3N80
FQPF2N80
FQPF9N90C
FQPF8N90C
FQPF5N90
FQPF6N90C
FQPF4N90
FQPF4N90C
FQPF3N90
FQPF2NA90
FQPF2N90
FQPF3P50
FQPF1P50
FQPF4P40
FQPF2P40
FQPF9P25
SFS9644
FQPF6P25
SFS9634
SFS9624
FQPF2P25
SFS9614
FQPF12P20
SFS9640
FQPF7P20
SFS9630
FQPF5P20
SFS9620
FQPF3P20
SFS9610
TO-220F P-Channel
Products
Min. (V)
BV
--400
-500
-500
-400
-250
-250
-250
-250
-250
-250
-250
-200
-200
-200
-200
-200
-200
-200
-200
800
800
800
800
800
800
900
900
900
900
900
900
900
900
900
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
10V
4.25
10.5
0.62
0.47
0.69
2.5
2.6
3.6
4.8
6.3
1.4
1.9
2.3
2.3
3.1
4.2
5.8
7.2
4.9
3.1
6.5
0.8
1.1
1.3
2.4
0.5
0.8
1.4
1.5
2.7
5
4
4
3
R
DS(ON)
4.5V
Max (Ω) @ V
2-63
2.5V
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.5
21
25
19
13
15
12
45
35
31
30
24
17
20
15
12
18
11
18
10
29
45
21
29
16
31
46
19
29
10
15
6
9
9
=5V
I
D
5.5
2.8
2.2
1.8
1.5
2.5
2.1
1.7
1.4
1.9
2.4
1.3
4.9
4.2
3.4
2.4
1.8
1.3
7.3
6.2
5.2
4.4
3.4
2.2
1.4
3
8
6
3
6
4
1
6
3
(A)
MOSFETs
P
D
51
47
43
39
39
35
68
60
51
56
47
47
43
39
35
39
28
39
28
50
40
45
33
28
32
13
50
40
45
33
38
28
32
13
(W)

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