LH28F160BJHE-BTL70 Sharp Electronics, LH28F160BJHE-BTL70 Datasheet - Page 12

LH28F160BJHE-BTL70

Manufacturer Part Number
LH28F160BJHE-BTL70
Description
Manufacturer
Sharp Electronics
Datasheet

Specifications of LH28F160BJHE-BTL70

Cell Type
NOR
Density
16Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
21/20Bit
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
2M/1M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant
JOTES:
,. X can be V, or VI, for control pins and addresses, and V,-,,,
‘. RF’# at GNDk0.2V ensures the lowest power consumption.
. See Section 4.2 for read identifier code data.
. Command writes involving block erase, full chip erase, word/byte write or lock-bit configuration are reliably executed
. Refer to Table 3 for valid D,, during a write operation.
. Never hold OE# low and WE# low at the same timing.
. Refer to DC Characteristics. When Vccw5V,,,,,
. RY/BY# is V,
SHARP
when VCCW=VCCWHIIz and V,,=2.lV-3.6V.
VCCWLK voltages.
algorithms. It is High Z during when the WSM is not busy, in block erase suspend mode (with word/byte write inactive),
word/byte write suspend mode or reset mode.
when the WSM is executing internal block erase, full chip erase, word/byte write or lock-bit configuration
memory contents can be read, but not altered.
LHFl6JO7
or VCCWHIR for V,,.
See DC Characteristics for
Rev. 1.2

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