LH28F160BJHE-BTL70 Sharp Electronics, LH28F160BJHE-BTL70 Datasheet - Page 38

• Manufacturer Part Number: LH28F160BJHE-BTL70
• Manufacturer: Sharp Electronics

Specifications of LH28F160BJHE-BTL70

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

I toVSL
NOTES:
1. In systems where CE# defines the write pulse width (within a longer WE# timing waveform), all setup, hold, and inactive
2. Sampled, not 100% tested.
3. Refer to Table 3 for valid A,, and D,, for block erase, full chip erase, word/byte write or lock-bit configuration.
4. Vccw should be held at V,,,Br,,
5. If BYTE# switch during reading cycle, exist the regulations separately.
62.6
tFVEH
fEHFV
SHARI=
WE# times should be measured relative to the CE# waveform.
configuration success (SR. l/3/4/5=0).
ALTERNATIVE
BYTE# Hold from CE# High
WP# V,, Hold from Valid SRD, RY/BY# High Z
BYTE# Setup to CE# Going High
CE#-CONTROLLED
until determination of block erase, full chip erase, word/byte write or lock-bit
WRITES(l)
LHFl6507
24
5
5
40
70
0
Rev. 1.2
ns
ns
ns
~