PESD3V3S2UT,215 NXP Semiconductors, PESD3V3S2UT,215 Datasheet

DIODE DBL ESD PROTECTION SOT23

PESD3V3S2UT,215

Manufacturer Part Number
PESD3V3S2UT,215
Description
DIODE DBL ESD PROTECTION SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PESD3V3S2UT,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Reverse Standoff (typ)
3.3V
Voltage - Breakdown
5.2V
Power (watts)
330W
Polarization
2 Channel Array - Unidirectional
Mounting Type
Surface Mount
Polarity
Unidirectional
Clamping Voltage
7 V
Operating Voltage
3.3 V
Breakdown Voltage
5.6 V
Termination Style
SMD/SMT
Peak Surge Current
18 A
Peak Pulse Power Dissipation
330 W
Capacitance
207 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Dimensions
1.4 mm W x 3 mm L x 1.1 mm H
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4046-2
934058196215
PESD3V3S2UT T/R
PESD3V3S2UT T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PESD3V3S2UT,215,,101485,SOT-23-3,NEXPERIA,,,,21+
0
Company:
Part Number:
PESD3V3S2UT,215,,140228,SOT-23-3,NEXPERIA,,,,21+
0
Product data sheet
Supersedes data of 2003 Aug 20
DATA SHEET
PESDxS2UT series
Double ESD protection diodes in
SOT23 package
DISCRETE SEMICONDUCTORS
2004 Apr 15

PESD3V3S2UT,215 Summary of contents

Page 1

DATA SHEET PESDxS2UT series Double ESD protection diodes in SOT23 package Product data sheet Supersedes data of 2003 Aug 20 DISCRETE SEMICONDUCTORS 2004 Apr 15 ...

Page 2

... NXP Semiconductors Double ESD protection diodes in SOT23 package FEATURES • Uni-directional ESD protection two lines • Max. peak pulse power 330 • Low clamping voltage: V (CL)R • Ultra-low reverse leakage current: I • ESD protection > • IEC 61000-4-2; level 4 (ESD) • IEC 61000-4-5 (surge); I ...

Page 3

... NXP Semiconductors Double ESD protection diodes in SOT23 package ORDERING INFORMATION TYPE NUMBER NAME PESD3V3S2UT PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER P peak pulse power pp PESD3V3S2UT PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT I peak pulse current ...

Page 4

... NXP Semiconductors Double ESD protection diodes in SOT23 package ESD maximum ratings SYMBOL PARAMETER ESD electrostatic discharge capability Notes 1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3. 2. Measured across either pins 1 and 3 or pins 2 and 3. ESD standards compliance ESD STANDARD IEC 61000-4-2 ...

Page 5

... NXP Semiconductors Double ESD protection diodes in SOT23 package ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER V reverse stand-off voltage RWM PESD3V3S2UT PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT I reverse leakage current RM PESD3V3S2UT PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT V breakdown voltage BR PESD3V3S2UT PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT C diode capacitance ...

Page 6

... NXP Semiconductors Double ESD protection diodes in SOT23 package SYMBOL PARAMETER R differential resistance diff PESD3V3S2UT PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT Notes 1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2. 2. Measured either across pins 1 and 3 or pins 2 and 3. GRAPHICAL DATA ( ( ( (1) PESD3V3S2UT and PESD5V2S2UT. ...

Page 7

... NXP Semiconductors Double ESD protection diodes in SOT23 package 240 C d (pF) 200 160 (1) 120 ( (1) PESD3V3S2UT 3.3 V. RWM (2) PESD5V2S2UT RWM = 25 ° MHz. T amb Fig.6 Diode capacitance as a function of reverse voltage; typical values. 2004 Apr 15 001aaa148 ( PESDxS2UT series (pF (1) (2) ( (1) PESD12VS2UT RWM (2) PESD15VS2UT RWM (3) PESD24VS2UT ...

Page 8

... NXP Semiconductors Double ESD protection diodes in SOT23 package R(25˚C) 1 −1 10 −100 −50 0 (1) PESD3V3S2UT 3.3 V. RWM PESD5V2S2UT RWM is less than 150 °C for PESD12V52UT RWM PESD15VS2UT RWM PESD24VS2UT RWM Fig.8 Relative variation of reverse leakage current as a function of junction temperature; typical values. ...

Page 9

... NXP Semiconductors Double ESD protection diodes in SOT23 package ESD TESTER note 1 Note 1: IEC61000-4-2 network = 330 Ω 150 pF vertical scale = 200 V/div horizontal scale = 50 ns/div GND unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network) GND vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform ...

Page 10

... NXP Semiconductors Double ESD protection diodes in SOT23 package APPLICATION INFORMATION The PESDxS2UT series is designed for uni-directional protection for up to two lines against damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESDxS2UT series may be used on lines where the signal polarities are below ground. PESDxS2UT series provide a surge capability 330 W (P waveform ...

Page 11

... NXP Semiconductors Double ESD protection diodes in SOT23 package PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Apr scale 3.0 1.4 2.5 1.9 0.95 2.8 1 ...

Page 12

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 13

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

Related keywords