PESD3V3S2UT,215 NXP Semiconductors, PESD3V3S2UT,215 Datasheet - Page 7

• Manufacturer Part Number: PESD3V3S2UT,215
• Description: DIODE DBL ESD PROTECTION SOT23
• Manufacturer: NXP Semiconductors

Specifications of PESD3V3S2UT,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5.2V
• Power (watts): 330W
• Polarization: 2 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 7 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 5.6 V
• Termination Style: SMD/SMT
• Peak Surge Current: 18 A
• Peak Pulse Power Dissipation: 330 W
• Capacitance: 207 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.4 mm W x 3 mm L x 1.1 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4046-2; 934058196215; PESD3V3S2UT T/R; PESD3V3S2UT T/R

NXP Semiconductors
2004 Apr 15
Double ESD protection diodes in SOT23
package
Fig.6
(1) PESD3V3S2UT; V
(2) PESD5V2S2UT; V
T
(pF)
C
amb
240
200
160
120
d
80
40
= 25 °C; f = 1 MHz.
0
Diode capacitance as a function of reverse
voltage; typical values.
1
(1)
(2)
RWM
RWM
2
= 3.3 V.
= 5 V.
3
4
001aaa148
V
R
(V)
5
7
(1) PESD12VS2UT; V
(2) PESD15VS2UT; V
(3) PESD24VS2UT; V
Fig.7
T
amb
(pF)
= 25 °C; f = 1 MHz.
C
d
50
40
30
20
10
0
Diode capacitance as a function of reverse
voltage; typical values.
0
5
RWM
RWM
RWM
(1)
(2)
(3)
= 12 V.
= 15 V.
= 24 V.
PESDxS2UT series
10
15
Product data sheet
20
001aaa149
V
R
(V)
25