DF2134AFA20V Renesas Electronics America, DF2134AFA20V Datasheet - Page 835
DF2134AFA20V
Manufacturer Part Number
DF2134AFA20V
Description
IC H8S/2100 MCU FLASH 80QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheets
1.HEWH8E10A.pdf
(19 pages)
2.D12312SVTE25V.pdf
(341 pages)
3.DF2134AFA20V.pdf
(1063 pages)
Specifications of DF2134AFA20V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
IrDA, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
58
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
80-QFP
For Use With
3DK2166 - DEV EVAL KIT H8S/2166
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2134AFA20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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25.4.7
(1) The F-ZTAT and mask ROM versions have been confirmed as fully meeting the reference
(2) On-chip power supply step-down circuit
values for electrical characteristics shown in this manual. However, actual performance
figures, operating margins, noise margins, and other properties may vary due to differences in
the manufacturing process, on-chip ROM, layout patterns, etc.
When system evaluation testing is carried out using the F-ZTAT version, the same evaluation
tests should also be conducted for the mask ROM version when changing over to that version.
The following products do not incorporate an internal power supply step-down circuit:
H8S/2134 F-ZTAT, H8S/2132 F-ZTAT, the mask ROM versions of the H8S/2132 and
H8S/2130.
When changing over to F-ZTAT versions or mask ROM versions incorporating an internal
step-down circuit, the VCC2 pin has the same pin location as the VCL pin in a step-down
circuit (see figure 25.3).
Therefore, note that the circuit patterns differ between these two types of products.
3. Block erase time (shows the total period for which the E-bit in FLMCR1 is set. It does
4. Maximum programming time (tP (max))
5. Number of times when the wait time after P-bit setting (z) = 200 µs.
6. Maximum erase time (tE (max))
7. Number of times when the wait time after E-bit setting (z) = 10 ms.
Usage Note
The number of writes should be set according to the actual set value of (z) to allow
not include the erase verification time.)
tP (max) = wait time after P-bit setting (z)
programming within the maximum programming time (tP (max)).
tE (max) = wait time after E-bit setting (z)
The number of erases should be set according to the actual set value of (z) to allow
erasing within the maximum erase time (tE (max)).
maximum programming count (N))
maximum erase count (N))
Rev. 4.00 Jun 06, 2006 page 779 of 1004
Section 25 Electrical Characteristics
REJ09B0301-0400
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