ATA6616-P3PW Atmel, ATA6616-P3PW Datasheet - Page 242

• Manufacturer Part Number: ATA6616-P3PW
• Description: TXRX MULTICHIP MOD LIN SIP 38QFN
• Manufacturer: Atmel
• Series: AVR® ATA66 LIN-SBCr

Specifications of ATA6616-P3PW

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: I²C, LIN, SPI, UART/USART, USI
• Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
• Number Of I /o: 16
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 11x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 38-VQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4.21
4.21.1
4.21.1.1
4.21.1.2
242
Flash Programming
Atmel ATA6616/ATA6617
Self-Programming the Flash
Performing Page Erase by SPM
Filling the Temporary Buffer (Page Loading)
The device provides a Self-Programming mechanism for downloading and uploading program
code by the MCU itself. The Self-Programming can use any available data interface (i.e. LIN,
USART, ...) and associated protocol to read code and write (program) that code into the Pro-
gram memory.
The Program memory is updated in a page by page fashion. Before programming a page with
the data stored in the temporary page buffer, the page must be erased. The temporary page
buffer is filled one word at a time using SPM and the buffer can be filled either before the Page
Erase command or between a Page Erase and a Page Write operation:
If only a part of the page needs to be changed, the rest of the page must be stored (for exam-
ple in the temporary page buffer) before the erase, and then be re-written. When using
alternative 1, the Boot Loader provides an effective Read-Modify-Write feature which allows
the user software to first read the page, do the necessary changes, and then write back the
modified data. If alternative 2 is used, it is not possible to read the old data while loading since
the page is already erased. The temporary page buffer can be accessed in a random
sequence. It is essential that the page address used in both the Page Erase and Page Write
operation is addressing the same page.
To execute Page Erase, set up the address in the Z-pointer, write “00000011
and execute SPM within four clock cycles after writing SPMCSR. The data in R1 and R0 is
ignored. The page address must be written to PCPAGE in the Z-register. Other bits in the
Z-pointer will be ignored during this operation.
To write an instruction word, set up the address in the Z-pointer and data in R1:R0, write
“00000001
The content of PCWORD in the Z-register is used to address the data in the temporary buffer.
The temporary buffer will auto-erase after a Page Write operation or by writing the CTPB bit in
SPMCSR. It is also erased after a system reset. Note that it is not possible to write more than
one time to each address without erasing the temporary buffer.
If the EEPROM is written in the middle of an SPM Page Load operation, all data loaded will be
lost.
• Alternative 1, fill the buffer before a Page Erase
• Alternative 2, fill the buffer after Page Erase
• The CPU is halted during the Page Erase operation.
– Fill temporary page buffer
– Perform a Page Erase
– Perform a Page Write
– Perform a Page Erase
– Fill temporary page buffer
– Perform a Page Write
b
” to SPMCSR and execute SPM within four clock cycles after writing SPMCSR.
9132D–AUTO–12/10
b
” to SPMCSR