ST72C254G2M6 STMicroelectronics, ST72C254G2M6 Datasheet - Page 116
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ST72C254G2M6
Manufacturer Part Number
ST72C254G2M6
Description
IC MCU 8BIT 8K FLASH SOIC-28
Manufacturer
STMicroelectronics
Series
ST7r
Datasheets
1.INDART-ST72C254.pdf
(3 pages)
2.ST72C104G1M6.pdf
(141 pages)
3.ST72C215G2M6.pdf
(140 pages)
Specifications of ST72C254G2M6
Core Processor
ST7
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
22
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
3.2 V ~ 5.5 V
Data Converters
A/D 6x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-SOIC (7.5mm Width)
Controller Family/series
ST7
No. Of I/o's
22
Ram Memory Size
256Byte
Cpu Speed
8MHz
No. Of Timers
2
Rohs Compliant
Yes
Processor Series
ST72C2x
Core
ST7
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
I2C, SPI
Maximum Clock Frequency
16 MHz
Number Of Programmable I/os
22
Number Of Timers
3 bit
Operating Supply Voltage
3.2 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Development Tools By Supplier
ST7MDT1-DVP2/US
Minimum Operating Temperature
- 40 C
On-chip Adc
8 bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
In Transition
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ST72C254G2M6
Manufacturer:
ST
Quantity:
20 000
ST72104Gx, ST72215Gx, ST72216Gx, ST72254Gx
EMC CHARACTERISTICS (Cont’d)
13.7.3 ESD Pin Protection Strategy
To protect an integrated circuit against Electro-
Static Discharge the stress must be controlled to
prevent degradation or destruction of the circuit el-
ements. The stress generally affects the circuit el-
ements which are connected to the pads but can
also affect the internal devices when the supply
pads receive the stress. The elements to be pro-
tected must not receive excessive current, voltage
or heating within their structure.
An ESD network combines the different input and
output ESD protections. This network works, by al-
lowing safe discharge paths for the pins subjected
to ESD stress. Two critical ESD stress cases are
presented in
pins and in
drain pins.
Figure 73. Positive Stress on a Standard Pad vs. V
Figure 74. Negative Stress on a Standard Pad vs. V
116/141
Main path
Path to avoid
Main path
Figure 75
Figure 73
V
V
V
V
DD
DD
SS
SS
and
and
Figure 76
Figure 74
(3a)
(3b)
(3a)
(3b)
for true open
for standard
OUT
OUT
SS
Standard Pin Protection
To protect the output structure the following ele-
ments are added:
To protect the input structure the following ele-
ments are added:
DD
– A diode to V
– A protection device between V
– A resistor in series with the pad (1)
– A diode to V
– A protection device between V
(4)
(4)
IN
IN
DD
DD
(3a) and a diode from V
(2a) and a diode from V
(2a)
(2b)
(2a)
(2b)
(1)
(1)
DD
DD
and V
and V
SS
SS
SS
SS
V
V
V
V
DD
SS
DD
SS
(3b)
(2b)
(4)
(4)