S9S08AW16AE0CFT Freescale Semiconductor, S9S08AW16AE0CFT Datasheet - Page 306

• Manufacturer Part Number: S9S08AW16AE0CFT
• Description: MCU 16K FLASH AUTO 48-QFN
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of S9S08AW16AE0CFT

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: LVD. POR, PWM, WDT
• Number Of I /o: 38
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-QFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Appendix A Electrical Characteristics and Timing Specifications
A.12
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see
306
1
2
3
4
5
Num
Typical values are based on characterization data at V
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional information
on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical
Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines
typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
10
1
2
3
4
6
8
5
7
9
FLASH Specifications
C
P
P
P
P
C
P
C
C
P
P
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T = 25°C
L
to T
H
= –40°C to + 125°C
Characteristic
5
3
3
Table A-16. FLASH Characteristics
2
MC9S08AW60 Data Sheet, Rev 2
4
3
3
DD
V
= 5.0 V, 25°C unless otherwise stated.
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
Burst
Page
Mass
D_ret
Fcyc
prog
Read
10,000
Min
150
2.7
2.7
Chapter 4,
15
—
5
20,000
4000
100,000
Typ
9
4
100
—
“Memory.”
1
Freescale Semiconductor
Max
6.67
200
5.5
5.5
—
—
—
cycles
DD
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
supply.