DF36034GFPJV Renesas Electronics America, DF36034GFPJV Datasheet - Page 493
![MCU 3/5V 32K J TEMP PB-FREE 64LQ](/photos/28/61/286100/64-lqfp__plqp0064kb-a_sml.jpg)
DF36034GFPJV
Manufacturer Part Number
DF36034GFPJV
Description
MCU 3/5V 32K J TEMP PB-FREE 64LQ
Manufacturer
Renesas Electronics America
Series
H8® H8/300H Tinyr
Specifications of DF36034GFPJV
Core Processor
H8/300H
Core Size
16-Bit
Speed
20MHz
Connectivity
CAN, SCI, SSU
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
45
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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Notes: 1. Make the time settings in accordance with the program/erase algorithms.
Item
Erasing
2. The programming time for 128 bytes. (Indicates the total time for which the P bit in the
3. The time required to erase one block. (Indicates the time for which the E bit in the flash
4. Programming time maximum value (t
5. Set the maximum programming count (N) according to the actual set values of z1, z2,
6. Erase time maximum value (t
7. Set the maximum erase count (N) according to the actual set value of (z), so that it
Programming count (n)
flash memory control register 1 (FLMCR1) is set. The program-verify time is not
included.)
memory control register 1 (FLMCR1) is set. The erase-verify time is not included.)
maximum programming count (N)
and z3, so that it does not exceed the programming time maximum value (t
The wait time after P bit setting (z1, z2) should be changed as follows according to the
value of the programming count (n).
erase count (N)
does not exceed the erase time maximum value (t
Wait time after SWE bit
setting*
Wait time after ESU bit
setting*
Wait time after E bit
setting*
Wait time after E bit clear*
Wait time after ESU bit
clear*
Wait time after EV bit
setting*
Wait time after dummy
write*
Wait time after EV bit clear*
Wait time after SWE bit
clear*
Maximum erase count *
1
7
1
1
1
n
n
1
1
1
1
*
6
6
1000
z1 = 30 µs
z2 = 200 µs
1
*
6
1
*
7
1
E
Symbol
x
y
z
N
(max.)) = wait time after E bit setting (z)
P
(max.)) = wait time after P bit setting (z)
Test
Condition
E
Rev. 4.00 Mar. 15, 2006 Page 459 of 556
(max.)).
Min.
1
100
10
10
10
20
2
4
100
—
Section 22 Electrical Characteristics
Typ.
—
—
—
—
—
—
—
—
—
—
Values
Max.
—
—
100
—
—
—
—
—
—
120
REJ09B0026-0400
maximum
P
(max.)).
Unit
µs
µs
ms
µs
µs
µs
µs
µs
µs
Times
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