C8051F121-GQR Silicon Laboratories Inc, C8051F121-GQR Datasheet - Page 118
![no-image](/images/manufacturer_photos/0/6/609/silicon_laboratories_inc_sml.jpg)
C8051F121-GQR
Manufacturer Part Number
C8051F121-GQR
Description
IC 8051 MCU FLASH 128K 64TQFP
Manufacturer
Silicon Laboratories Inc
Series
C8051F12xr
Specifications of C8051F121-GQR
Core Processor
8051
Core Size
8-Bit
Speed
100MHz
Connectivity
EBI/EMI, SMBus (2-Wire/I²C), SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Number Of I /o
32
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8.25K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x8b, 8x12b; D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TQFP, 64-VQFP
Processor Series
C8051F1x
Core
8051
Data Bus Width
8 bit
Data Ram Size
8.25 KB
Interface Type
I2C, SMBus, SPI, UART
Maximum Clock Frequency
100 MHz
Number Of Programmable I/os
32
Number Of Timers
5
Operating Supply Voltage
2.7 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051F120DK
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 8 Channel
On-chip Dac
12 bit, 2 Channel
For Use With
336-1224 - DEVKIT-F120/21/22/23/24/25/26/27
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
C8051F121-GQR
Manufacturer:
Silicon Laboratories Inc
Quantity:
10 000
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- Download datasheet (2Mb)
C8051F120/1/2/3/4/5/6/7
C8051F130/1/2/3
Table 9.1. Voltage Reference Electrical Characteristics
V
118
Analog Bias Generator Power
Supply Current
Output Voltage
VREF Short-Circuit Current
VREF Temperature Coefficient
Load Regulation
VREF Turn-on Time 1
VREF Turn-on Time 2
VREF Turn-on Time 3
Reference Buffer Power Sup-
ply Current
Power Supply Rejection
Input Voltage Range
Input Current
DD
= 3.0 V, AV+ = 3.0 V, –40 to +85 °C unless otherwise specified.
Parameter
BIASE = 1
25 °C ambient
Load = 0 to 200 µA to AGND
4.7 µF tantalum, 0.1 µF ceramic
bypass
0.1 µF ceramic bypass
no bypass cap
External Reference (REFBE = 0)
Internal Reference (REFBE = 1)
Conditions
Rev. 1.4
2.36
1.00
Min
—
—
—
—
—
—
—
—
—
—
2.43
Typ
100
140
0.5
15
20
10
40
—
—
2
0
(AV+) – 0.3
2.48
Max
30
—
—
—
—
—
—
—
—
1
ppm/µA
ppm/°C
ppm/V
Units
mA
µA
ms
µA
µA
µs
µs
V
V
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