DF2377RVFQ33W Renesas Electronics America, DF2377RVFQ33W Datasheet - Page 979

• Manufacturer Part Number: DF2377RVFQ33W
• Description: IC H8S MCU FLASH 3V 384K 144LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2377RVFQ33W

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 97
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 6x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

8. When the data storable area indicated by programming parameter FMPDR is within the flash
In consideration of these conditions, there are three factors; operating mode, the bank structure of
the user MAT, and operations.
The areas in which the programming data can be stored for execution are shown in tables.
Table 21.7 Executable MAT
Operation
Programming
Erasing
Note : * Programming/Erasing is possible to user MATs.
Boot MAT. Please make sure you know which MAT is selected when switching between
them.
memory area, an error will occur even when the data stored is normal. Therefore, the data
should be transferred to the on-chip RAM to place the address that FMPDR indicates in an
area other than the flash memory.
Table 21.8 (2)
User Program Mode
Table 21.8 (1)
Section 21 Flash Memory (0.18-μm F-ZTAT Version)
Rev.7.00 Mar. 18, 2009 page 911 of 1136
Initiated Mode
User Boot Mode *
Table 21.8 (3)
Table 21.8 (4)
REJ09B0109-0700