SAK-TC1767-256F80HL AD Infineon Technologies, SAK-TC1767-256F80HL AD Datasheet - Page 91

• Manufacturer Part Number: SAK-TC1767-256F80HL AD
• Description: IC MCU 32BIT FLASH 176-LQFP
• Manufacturer: Infineon Technologies
• Series: TC17xxr

Specifications of SAK-TC1767-256F80HL AD

• Core Processor: TriCore
• Core Size: 32-Bit
• Speed: 80MHz
• Connectivity: ASC, CAN, MLI, MSC, SSC
• Peripherals: DMA, POR, WDT
• Number Of I /o: 88
• Program Memory Size: 2MB (2M x 8)
• Program Memory Type: FLASH
• Ram Size: 128K x 8
• Voltage - Supply (vcc/vdd): 1.42 V ~ 1.58 V
• Data Converters: A/D 4x10b, 32x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 176-LFQFP
• Data Bus Width: 32 bit
• Data Ram Size: 92 KB
• Interface Type: SPI
• Maximum Clock Frequency: 80 MHz
• Number Of Programmable I/os: 88
• Number Of Timers: 2
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 2 (12 bit, 16 Channel)
• Packages: PG-LQFP-176
• Max Clock Frequency: 80.0 MHz
• Sram (incl. Cache): 128.0 KByte
• Can Nodes: 2
• A / D Input Lines (incl. Fadc): 36
• Program Memory: 2.0 MB
• For Use With: B158-H8539-G2-X-7600IN - KIT STARTER TC176X SERIES
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details
• Other names: SP000442086

3) Maximum resistance of the driver
4) Function verified by design, value verified by design characterization.
5) The following constraint applies to an LVDS pair used in CMOS mode: only one pin of a pair should be used
Data Sheet
25 / 20 Ω for strong driver mode,
200 / 150 Ω for medium driver mode,
600 / 400 Ω for weak driver mode,
verified by design / characterization.
Hysteresis is implemented to avoid metastable states and switching due to internal ground bounce.
It cannot be guaranteed that it suppresses switching due to external system noise.
as output, the other should be used as input, or both pins should be used as inputs. Using both pins as outputs
is not recommended because of the higher crosstalk between them.
I
R
OH / L
I
DSON
OH / L
I
OH / L
< 2 mA,
, defined for P_MOS / N_MOS transistor separately:
< 100 uA,
< 400 uA,
87
Electrical Parameters
V1.3, 2009-09
TC1767