PIC18LF2539T-I/SO Microchip Technology, PIC18LF2539T-I/SO Datasheet - Page 269

• Manufacturer Part Number: PIC18LF2539T-I/SO
• Description: IC MCU FLASH 12KX16 EE AD 28SOIC
• Manufacturer: Microchip Technology
• Series: PIC® 18Fr

Specifications of PIC18LF2539T-I/SO

• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
• Number Of I /o: 21
• Program Memory Size: 24KB (12K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 1408 x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 5.5 V
• Data Converters: A/D 5x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOIC (7.5mm Width)
• Processor Series: PIC18LF
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 1408 B
• Interface Type: I2C, SPI, AUSART
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 21
• Number Of Timers: 16 bit
• Operating Supply Voltage: 2 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
• Development Tools By Supplier: DV164005, DV164136
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 5 bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TABLE 23-2:
 2002 Microchip Technology Inc.
DC Characteristics
D110
D113
D120
D121
D122
D123
D123A T
D124
D130
D131
D132
D132A V
D132B V
D133
D133A T
D133A T
D134
D134A T
Note 1: Retention time is valid, provided no other specifications are violated.
Param
No.
2: Refer to Section 6.8 for a more detailed discussion on data EEPROM endurance.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
V
I
E
V
T
T
T
E
V
V
T
T
DDP
Sym
RETD
RETD
REF
IE
IW
IW
RETD
RETD
only and are not tested.
DEW
PP
D
DRW
P
PR
IE
IW
PEW
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Cell Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program FLASH Memory
Cell Endurance
V
V
V
or Write
V
ICSP Block Erase Cycle Time
ICSP Erase or Write Cycle Time
(externally timed)
Self-timed Write Cycle Time
Characteristic Retention
Characteristic Retention
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
DD
DD
for Read/Write
for Read
for Block Erase
for Externally Timed Erase
for Self-timed Write
Characteristic
PP
(2)
pin
Preliminary
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
100K
V
V
V
9.00
Min
10K
100
100
1M
4.5
4.5
40
40
—
MIN
—
MIN
MIN
—
—
1
Typ†
100K
10M
1M
—
—
—
—
—
—
—
—
—
—
—
—
4
4
2
13.25
Max
5.5
5.5
5.5
5.5
5.5
10
—
—
—
—
—
—
—
—
—
—
—
-40°C ≤ T
Units
Year Provided no other
Year 25°C (Note 1)
Year Provided no other
Year 25°C (Note 1)
E/W -40°C to +85°C
E/W -40°C to +85°C
E/W -40°C to +85°C
mA
ms
ms
ms
ms
V
V
V
V
V
V
A
A
PIC18FXX39
≤ +85°C for industrial
≤ +125°C for extended
Using EECON to read/write
V
voltage
specifications are violated
V
voltage
Using ICSP port
Using ICSP port
V
voltage
V
V
specifications are violated
MIN
MIN
MIN
DD
DD
≥ 4.5V
≥ 4.5V
= Minimum operating
= Minimum operating
= Minimum operating
Conditions
DS30485A-page 267