PIC18LF2539T-I/SO Microchip Technology, PIC18LF2539T-I/SO Datasheet - Page 39

IC MCU FLASH 12KX16 EE AD 28SOIC

PIC18LF2539T-I/SO

Manufacturer Part Number
PIC18LF2539T-I/SO
Description
IC MCU FLASH 12KX16 EE AD 28SOIC
Manufacturer
Microchip Technology
Series
PIC® 18Fr

Specifications of PIC18LF2539T-I/SO

Core Processor
PIC
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
21
Program Memory Size
24KB (12K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
1408 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 5x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-SOIC (7.5mm Width)
Processor Series
PIC18LF
Core
PIC
Data Bus Width
8 bit
Data Ram Size
1408 B
Interface Type
I2C, SPI, AUSART
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
21
Number Of Timers
16 bit
Operating Supply Voltage
2 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
DV164005, DV164136
Minimum Operating Temperature
- 40 C
On-chip Adc
5 bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
4.6
An “Instruction Cycle” consists of four Q cycles (Q1,
Q2, Q3 and Q4). The instruction fetch and execute are
pipelined such that fetch takes one instruction cycle,
while decode and execute takes another instruction
cycle. However, due to the pipelining, each instruction
effectively executes in one cycle. If an instruction
causes the program counter to change (e.g., GOTO),
then two cycles are required to complete the instruction
(Example 4-1).
EXAMPLE 4-1:
4.7
The program memory is addressed in bytes. Instruc-
tions are stored as two bytes or four bytes in program
memory. The Least Significant Byte of an instruction
word is always stored in a program memory location
with an even address (LSB = 0). Figure 4-4 shows an
example of how instruction words are stored in the pro-
gram memory. To maintain alignment with instruction
boundaries, the PC increments in steps of 2 and the
LSB will always read ‘0’ (see Section 4.4).
FIGURE 4-4:
 2002 Microchip Technology Inc.
1. MOVLW 55h
2. MOVWF PORTB
3. BRA
4. BSF
5. Instruction @ address SUB_1
All instructions are single cycle, except for any program branches. These take two cycles since the fetch instruction
is “flushed” from the pipeline while the new instruction is being fetched and then executed.
Instruction Flow/Pipelining
Instructions in Program Memory
SUB_1
PORTA, BIT3 (Forced NOP)
Instruction 1:
Instruction 2:
Instruction 3:
INSTRUCTION PIPELINE FLOW
INSTRUCTIONS IN PROGRAM MEMORY
Fetch 1
Program Memory
Byte Locations
T
MOVLW
GOTO
MOVFF
CY
0
Execute 1
055h
000006h
123h, 456h
Fetch 2
T
CY
1
Preliminary
Execute 2
Fetch 3
T
CY
LSB = 1
2
A fetch cycle begins with the program counter (PC)
incrementing in Q1.
In the execution cycle, the fetched instruction is latched
into the “Instruction Register” (IR) in cycle Q1. This
instruction is then decoded and executed during the
Q2, Q3, and Q4 cycles. Data memory is read during Q2
(operand read) and written during Q4 (destination
write).
The CALL and GOTO instructions have an absolute pro-
gram memory address embedded into the instruction.
Since instructions are always stored on word bound-
aries, the data contained in the instruction is a word
address. The word address is written to PC<20:1>,
which accesses the desired byte address in program
memory. Instruction #2 in Figure 4-4 shows how the
instruction, ‘GOTO 000006h’, is encoded in the pro-
gram memory. Program branch instructions, which
encode a relative address offset, operate in the same
manner. The offset value stored in a branch instruction
represents the number of single word instructions that
the PC will be offset by. Section 21.0 provides further
details of the instruction set.
0Fh
EFh
F0h
C1h
F4h
Execute 3
Fetch 4
T
CY
LSB = 0
3
55h
03h
00h
23h
56h
Fetch SUB_1 Execute SUB_1
Flush (NOP)
PIC18FXX39
Word Address
T
CY
000000h
000002h
000004h
000006h
000008h
00000Ah
00000Ch
00000Eh
000010h
000012h
000014h
4
DS30485A-page 37
T
CY
5

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