HD64F3694FY Renesas Electronics America, HD64F3694FY Datasheet - Page 117

IC H8 MCU FLASH 32K 48-LQFP

HD64F3694FY

Manufacturer Part Number
HD64F3694FY
Description
IC H8 MCU FLASH 32K 48-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300H Tinyr
Datasheet

Specifications of HD64F3694FY

Core Processor
H8/300H
Core Size
16-Bit
Speed
20MHz
Connectivity
I²C, SCI
Peripherals
PWM, WDT
Number Of I /o
29
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
48-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD64F3694FYJV
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
HD64F3694FYV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
The features of the 32-kbyte flash memory built into the flash memory version are summarized
below.
7.1
Figure 7.1 shows the block configuration of 32-kbyte flash memory. The thick lines indicate
erasing units, the narrow lines indicate programming units, and the values are addresses. The flash
memory is divided into 1 kbyte 4 blocks and 28 kbytes 1 block. Erasing is performed in these
units. Programming is performed in 128-byte units starting from an address with lower eight bits
H'00 or H'80.
ROM3321A_000120030300
Programming/erase methods
Reprogramming capability
On-board programming
Programmer mode
Automatic bit rate adjustment
Programming/erasing protection
Power-down mode
The flash memory is programmed 128 bytes at a time. Erase is performed in single-block
units. The flash memory is configured as follows: 1 kbyte 4 blocks and 28 kbytes 1
block. To erase the entire flash memory, each block must be erased in turn.
The flash memory can be reprogrammed up to 1,000 times.
On-board programming/erasing can be done in boot mode, in which the boot program built
into the chip is started to erase or program of the entire flash memory. In normal user
program mode, individual blocks can be erased or programmed.
Flash memory can be programmed/erased in programmer mode using a PROM
programmer, as well as in on-board programming mode.
For data transfer in boot mode, this LSI's bit rate can be automatically adjusted to match
the transfer bit rate of the host.
Sets software protection against flash memory programming/erasing.
Operation of the power supply circuit can be partly halted in subactive mode. As a result,
flash memory can be read with low power consumption.
Block Configuration
Section 7 ROM
Rev.5.00 Nov. 02, 2005 Page 87 of 418
REJ09B0028-0500
Section 7 ROM

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