BLF6G10L-200BRN,11 NXP Semiconductors, BLF6G10L-200BRN,11 Datasheet - Page 30
BLF6G10L-200BRN,11
Manufacturer Part Number
BLF6G10L-200BRN,11
Description
TRANS LDMOS SOT502
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G10L-40BRN118.pdf
(110 pages)
Specifications of BLF6G10L-200BRN,11
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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1.6 Automotive & Industrial
Note: looking for GPS? See chapter 1.5.1 Handset.
1.6.1 Active antenna
Application diagram
Recommended products
32
Function
Function
Function
Product highlight:
BGU7003 SiGe:C MMIC
Manufactured in NXP’s latest SiGe:C process, this high-frequency
RF MMIC delivers high-quality reception with extended battery life.
It is a cost-effective, silicon based alternative to GaAs devices, and
offers higher integration and easier design-in than discrete bipolar
transistors.
2
3
1
st
nd
rd
LNA
LNA
LNA
stage
stage
stage
NXP Semiconductors RF Manual 14
Product
Product
Product
RF transistor
MMIC
MMIC
MMIC
antenna
Low noise wideband
wideband amplifier
General purpose
SiGe:C transistor
SiGe:C MMIC
amplifier
th
stage
LNA
edition
1
st
Package
SOT343R
SOT343R
Package
SOT363
SOT363
SOT363
SOT363
Package
SOT343F
SOT891
stage
LNA
2
nd
stage
LNA
Type
BGA2001
BGA2003
Type
BGM1013
BGM1011
BGA2715
BGA2748
Type
BFU725F/N1
BGU7003
3
rd
Features
`
`
`
`
`
`
Low-noise, high-gain microwave MMIC
Maximum stable gain = 19 dB at 1.575 GHz
110-GHz f
Optimized performance at low (5-mA) supply current
Extemely thin, leadless 6-pin SOT891 package
Integrated biasing and shutdown for easy integration
CHIPSET
T
brb215
-Silicon Germanium technology
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