BLF6G10L-200BRN,11 NXP Semiconductors, BLF6G10L-200BRN,11 Datasheet - Page 62
BLF6G10L-200BRN,11
Manufacturer Part Number
BLF6G10L-200BRN,11
Description
TRANS LDMOS SOT502
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G10L-40BRN118.pdf
(110 pages)
Specifications of BLF6G10L-200BRN,11
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
- Current page: 62 of 110
- Download datasheet (3Mb)
3.2
3.2.1 Varicap diodes
Why choose NXP semiconductors’ varicap diodes:
` Reference designs for TV and radio tuning
` Direct matching process
` Small tolerances
` Short leadtimes
` Complete portfolio covering broad frequency range and variety in package (including leadless)
` Reliable volume supply
VCO and FM radio tuning varicap diodes
^ = Including special design for FM car radio (CREST-IC:TEF6860).
^^ = Including special design for mobile phone tuner ICs.
TV / VCR / DVD / HDD varicap diodes - UHF tuning
Bold = Highly recommended product
64
BB145B
BB156
BB198
BB199
BB201
BB202^^
BB202LX^^
BB207^
BB208-02^
BB208-03^
Matched
BB149
BB149A
BB179
BB179B
BB179BLX
BB179LX
BB184
BB189
Unmatched
BB135
Type
Type
NEW : Varicap selection guide on www.nxp.com/varicaps
NXP Semiconductors RF Manual 14
Easy-to-use parametric filters help you to choose
the right varicap for your design.
RF diodes
SOD323
SOD323
SOD523
SOD523
SOD882T
SOD882T
SOD523
SOD523
SOD323
SOD523
SOD323
SOD523
SOD523
SOT23
SOD523
SOD882T
SOT23
SOD523
SOD323
Package
Package
Number
of
diodes
1.951
1.951
(pF)
min
1.95
1.87
1.89
1.9
1.9
1.9
1.7
C
d
1
1
2
1
1
2
1
1
1
1
(pF)
2.04
typ
2.1
2.1
2.1
2.1
2.1
C
2
-
-
Confi-
guration
d
SG
SG
SG
SG
CC
SG
SG
CC
SG
SG
th
2.225
2.225
max
(pF)
2.25
2.25
2.25
2.22
2.18
2.13
edition
2.1
C
d
36.5
28.2
28.2
min
(pF)
14.4
19.9
19.9
6.4
C
25
89
76
@ V
d
(V)
28
25
28
28
28
28
28
10
28
=
R
(pF)
typ
C
16
95
81
@ f = 1 MHz
-
-
-
-
-
-
-
d
C
8.45
8.45
8.45
8.45
d1
min
8.2
6.3
8.9
/C
6
-
max
(pF)
28.5
42.5
33.5
33.5
23.2
23.2
17.6
102
7.2
C
86
d2
d
C
@ V
d1
typ
7.3
(V)
0.5
0.2
0.2
9
9
9
9
9
9
7
=
/C
-
1
1
1
1
1
1
1
R
d2
(pF)
2.55
25.5
25.5
C
min
11.8
4.2
4.8
4.5
4.5
7.2
7.2
C
max
d1
10.9
10.9
10.9
Type of connection:
SG:
CC:
d
10
10
12
/C
-
-
-
d2
@ f = 1 MHz
(pF)
27.6
27.6
typ
4.8
C
Single
Common Cathode
-
-
-
-
-
-
-
d
@ V
(V)
0.5
=
1
1
1
1
1
1
1
2
1
max
(pF)
2.95
13.8
29.7
11.2
11.2
29.7
5.4
6.8
5.4
5.4
C
d
@ V
(V)
28
28
28
28
28
28
10
25
28
=
@ V
2
(V)
2.3
2.3
7.5
7.5
7.5
7.5
7.5
=
4
4
2
R
0.65
0.65
0.65
0.65
typ
(Ω)
0.6
0.6
0.6
r
-
-
s
C
min
C
2.2
2.7
2.8
2.5
2.5
2.6
3.7
3.7
3.1
d1
-
d2
/
max
0.75
0.75
0.75
0.75
0.75
(Ω)
0.7
r
-
-
-
s
max
C
C
3.3
5.2
5.2
3.9
3.8
d1
-
-
-
-
-
d2
/
(MHz)
@ f =
470
470
470
470
470
470
470
470
470
@ V1
(V)
0.5
0.2
0.2
=
1
1
1
1
1
1
-
C
(pF)
30
@
d
9
9
9
9
9
9
9
9
@ V2
=
(V)
7.5
7.5
2.3
2.3
7.5
7.5
7.5
=
4
2
-
∆C
1.8
C
2
2
2
2
2
2
2
-
d
d
/
0.25
0.25
0.35
0.35
0.35
0.35
typ
0.2
(Ω)
0.4
r
-
-
s
@ V
(V)
0.5
=
1
1
1
1
1
1
2
-
1
max
0.5
0.5
0.5
(Ω)
0.6
0.7
0.8
0.6
0.4
r
-
-
s
@ V
(V)
28
28
28
28
28
28
10
25
=
-
2
(MHz)
@ f =
100
100
100
100
100
100
100
100
470
470
N
10
10
10
10
10
10
@
=
5
5
-
s
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