BLF6G10L-200BRN,11 NXP Semiconductors, BLF6G10L-200BRN,11 Datasheet - Page 36
BLF6G10L-200BRN,11
Manufacturer Part Number
BLF6G10L-200BRN,11
Description
TRANS LDMOS SOT502
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G10L-40BRN118.pdf
(110 pages)
Specifications of BLF6G10L-200BRN,11
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
- Current page: 36 of 110
- Download datasheet (3Mb)
1.6.7 Medical Imaging
Application diagram
Recommended products
38
Function
Product highlight:
NXP’s line of 50 V High voltage LDMOS devices enable highest
power output and feature unequalled ruggedness for pulsed
operation in MRI and NMR applications. The high power densities
enable very compact amplifier design.
driver
driver
driver
final
final
final
final
NXP Semiconductors RF Manual 14
Type
BLF871(S)
BLF881
BLF571
BLF573S
BLF574
BLF578
BLF645
Gradient coils
Magnet
RF coils
ELECTRONICS
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1300
(MHz)
f
RF
range
th
edition
1200
100
300
400
100
120
20
P
W
L
RF amplifier
X GRADIENT
Y GRADIENT
Z GRADIENT
AMPLIFIER
AMPLIFIER
AMPLIFIER
ADC
27.5
27.2
26.5
dB
G
21
21
24
18
p
GENERATOR
WAVEFORM
COMPUTER
DISPLAY
IMAGE
Features
`
`
`
`
Best broadband efficiency
Highest power (density) devices
Unrivalled ruggedness
Very consistent device performance
brb434
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