BLF6G10L-200BRN,11 NXP Semiconductors, BLF6G10L-200BRN,11 Datasheet - Page 58
BLF6G10L-200BRN,11
Manufacturer Part Number
BLF6G10L-200BRN,11
Description
TRANS LDMOS SOT502
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G10L-40BRN118.pdf
(110 pages)
Specifications of BLF6G10L-200BRN,11
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
- Current page: 58 of 110
- Download datasheet (3Mb)
` Reduces component count and considerably simplifies radar
` P1 dB output power 200 W
` Efficiency > 40%
` Industry standard footprint
` 50 Ω in/out matched for entire bandwidth
` Lightweight heat sink included
` The advantages of LDMOS in comparison with Bipolar
60
Features:
system design
For a complete list of products see the respective small
signal and power microwave pages
- Higher gain and better efficiency
- Better ruggedness – overdrive without risk to 5 dB
- Improved pulse droop and insertion phase
- Very consistent performance – no tuning required
- Improved thermal characteristics, no thermal runaway
- Non-toxic packaging and ROHS compliance
NXP Semiconductors RF Manual 14
th
edition
Microwave applications and bands of operation
System
VHF and UHF
L-Band
S-Band
X-band
Commercial Avionics
Military Avionics
DME (Distance Measuring Equipment)
Transponders
Mode A / Mode S / Mode C / TCAS
IFF Transponders (Identification, Friend or Foe)
TACAN (Tactical Air Navigation)
JTIDS / MIDS
(Joint Tactical Information Distribution System)
Marine radar
8000 - 12000 MHz
1200 - 1400 MHz
2700 - 3500 MHz
1030 - 1090 MHz
1030 - 1090 MHz
9300 - 9500 MHz
978 - 1215 MHz
960 - 1215 MHz
960 - 1215 MHz
Frequency
<1 GHz
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