BFR540,235 NXP Semiconductors, BFR540,235 Datasheet - Page 10
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
BFR540,235
Manufacturer Part Number
BFR540,235
Description
TRANS NPN 15V 120MA 9GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR540215.pdf
(13 pages)
Specifications of BFR540,235
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2.4dB @ 900MHz
Power - Max
500mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 40mA, 8V
Current - Collector (ic) (max)
120mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
100
Dc Current Gain Hfe Max
250
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
120 mA
Power Dissipation
500 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Philips Semiconductors
8. Package outline
Fig 17. Package outline SOT23 (T0-236AB).
9397 750 13398
Product data sheet
Plastic surface mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
Rev. 05 — 1 September 2004
0
2
1.9
e
w
0.95
B
M
e
1
scale
B
EIAJ
1
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
NPN 9 GHz wideband transistor
PROJECTION
0.1
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
EUROPEAN
w
L p
A
Q
c
X
v
BFR540
ISSUE DATE
M
97-02-28
99-09-13
A
SOT23
10 of 13