BFR540,235 NXP Semiconductors, BFR540,235 Datasheet - Page 2
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BFR540,235
Manufacturer Part Number
BFR540,235
Description
TRANS NPN 15V 120MA 9GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR540215.pdf
(13 pages)
Specifications of BFR540,235
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2.4dB @ 900MHz
Power - Max
500mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 40mA, 8V
Current - Collector (ic) (max)
120mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
100
Dc Current Gain Hfe Max
250
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
120 mA
Power Dissipation
500 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Philips Semiconductors
2. Pinning information
3. Ordering information
4. Marking
9397 750 13398
Product data sheet
Table 1:
[1]
Table 2:
Table 3:
Table 4:
[1]
Symbol
NF
Pin
1
2
3
Type number
BFR540
Type number
BFR540
s
21
T
* = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China.
2
sp
is the temperature at the soldering point of the collector tab.
Parameter
insertion power gain
noise figure
Quick reference data
Pinning
Ordering information
Marking
Description
base
emitter
collector
Package
Name
-
Rev. 05 — 1 September 2004
Description
plastic surface mounted package; 3 leads
…continued
Conditions
I
T
f = 900 MHz
T
C
amb
s
amb
I
f = 900 MHz
I
f = 900 MHz
I
f = 2 GHz
= 40 mA; V
=
C
C
C
= 10 mA;
= 40 mA;
= 10 mA;
= 25 C;
= 25 C
opt
; V
CE
Marking code
33*
CE
= 8 V;
= 8 V;
Simplified outline
1
NPN 9 GHz wideband transistor
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
Min
12
-
-
-
3
SOT23
2
Typ
13
1.3
1.9
2.1
Symbol
BFR540
1
Max
-
1.8
2.4
-
sym021
Version
SOT23
3
2
2 of 13
Unit
dB
dB
dB
dB