BFR540,235 NXP Semiconductors, BFR540,235 Datasheet - Page 11

• Manufacturer Part Number: BFR540,235
• Description: TRANS NPN 15V 120MA 9GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR540,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 250
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 120 mA
• Power Dissipation: 500 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Philips Semiconductors
9. Revision history
Table 8:
9397 750 13398
Product data sheet
Document ID
BFR540_5
Modifications:
BFR540_4
BFR540_3
BFR540_CNV_2
Revision history
Release date
20040901
20000530
19990823
19971204
•
•
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
Table 4
“Marking”: Format of marking code changed.
Data sheet status
Product data sheet
Product specification
Product specification
Product specification
Rev. 05 — 1 September 2004
Change notice
-
-
-
-
Doc. number
9397 750 13398
9397 750 07062
9397 750 06338
not applicable
NPN 9 GHz wideband transistor
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Supersedes
BFR540_4
BFR540_3
BFR540_CNV_2
-
BFR540
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