BFR540,235 NXP Semiconductors, BFR540,235 Datasheet - Page 3

• Manufacturer Part Number: BFR540,235
• Description: TRANS NPN 15V 120MA 9GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR540,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 250
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 120 mA
• Power Dissipation: 500 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Philips Semiconductors
5. Limiting values
6. Thermal characteristics
7. Characteristics
9397 750 13398
Product data sheet
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 6:
[1]
Table 7:
T
Symbol
V
V
V
I
P
T
T
Symbol
R
Symbol Parameter
I
h
C
C
C
f
G
s
C
CBO
T
j
FE
stg
j
CBO
CES
EBO
tot
th(j-sp)
e
c
re
21
UM
= 25 C unless otherwise specified.
2
T
T
sp
sp
is the temperature at the soldering point of the collector tab.
is the temperature at the soldering point of the collector tab.
collector cut-off
current
DC current gain
emitter
capacitance
collector
capacitance
feedback
capacitance
transition
frequency
maximum
unilateral power
gain
insertion power
gain
Parameter
thermal resistance from junction to soldering point
Limiting values
Thermal characteristics
Characteristics
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
Rev. 05 — 1 September 2004
Conditions
I
I
I
f = 1 MHz
I
f = 1 MHz
I
f = 1 MHz
I
f = 1 GHz
I
T
I
T
E
C
C
E
C
C
C
C
amb
amb
f = 900 MHz
f = 2 GHz
= 0 A; V
= i
= 40 mA; V
= i
= 0 A; V
= 40 mA; V
= 40 mA; V
= 40 mA; V
e
c
= 25 C
= 25 C; f = 900 MHz
= 0 A; V
= 0 A; V
CB
CB
= 8 V
= 8 V;
CE
CE
CE
CE
EB
CB
Conditions
open emitter
R
open collector
T
sp
BE
= 8 V
= 8 V;
= 8 V;
= 8 V;
= 0.5 V;
= 8 V;
= 0
70 C
[1]
NPN 9 GHz wideband transistor
Min
-
100
-
-
-
-
-
-
12
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
Conditions
Min
-
-
-
-
-
-
65
Typ
-
120
2
0.9
0.6
9
14
7
13
Max
20
15
2.5
120
500
+150
175
BFR540
[1]
Max
50
250
-
-
-
-
-
-
-
Typ
260
Unit
V
V
V
mA
mW
C
C
3 of 13
Unit
K/W
Unit
nA
pF
pF
pF
GHz
dB
dB
dB