BFR540,235 NXP Semiconductors, BFR540,235 Datasheet - Page 3
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BFR540,235
Manufacturer Part Number
BFR540,235
Description
TRANS NPN 15V 120MA 9GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR540215.pdf
(13 pages)
Specifications of BFR540,235
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2.4dB @ 900MHz
Power - Max
500mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 40mA, 8V
Current - Collector (ic) (max)
120mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
100
Dc Current Gain Hfe Max
250
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
120 mA
Power Dissipation
500 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Philips Semiconductors
5. Limiting values
6. Thermal characteristics
7. Characteristics
9397 750 13398
Product data sheet
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 6:
[1]
Table 7:
T
Symbol
V
V
V
I
P
T
T
Symbol
R
Symbol Parameter
I
h
C
C
C
f
G
s
C
CBO
T
j
FE
stg
j
CBO
CES
EBO
tot
th(j-sp)
e
c
re
21
UM
= 25 C unless otherwise specified.
2
T
T
sp
sp
is the temperature at the soldering point of the collector tab.
is the temperature at the soldering point of the collector tab.
collector cut-off
current
DC current gain
emitter
capacitance
collector
capacitance
feedback
capacitance
transition
frequency
maximum
unilateral power
gain
insertion power
gain
Parameter
thermal resistance from junction to soldering point
Limiting values
Thermal characteristics
Characteristics
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
Rev. 05 — 1 September 2004
Conditions
I
I
I
f = 1 MHz
I
f = 1 MHz
I
f = 1 MHz
I
f = 1 GHz
I
T
I
T
E
C
C
E
C
C
C
C
amb
amb
f = 900 MHz
f = 2 GHz
= 0 A; V
= i
= 40 mA; V
= i
= 0 A; V
= 40 mA; V
= 40 mA; V
= 40 mA; V
e
c
= 25 C
= 25 C; f = 900 MHz
= 0 A; V
= 0 A; V
CB
CB
= 8 V
= 8 V;
CE
CE
CE
CE
EB
CB
Conditions
open emitter
R
open collector
T
sp
BE
= 8 V
= 8 V;
= 8 V;
= 8 V;
= 0.5 V;
= 8 V;
= 0
70 C
[1]
NPN 9 GHz wideband transistor
Min
-
100
-
-
-
-
-
-
12
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
Conditions
Min
-
-
-
-
-
-
65
Typ
-
120
2
0.9
0.6
9
14
7
13
Max
20
15
2.5
120
500
+150
175
BFR540
[1]
Max
50
250
-
-
-
-
-
-
-
Typ
260
Unit
V
V
V
mA
mW
C
C
3 of 13
Unit
K/W
Unit
nA
pF
pF
pF
GHz
dB
dB
dB