BFR540,235 NXP Semiconductors, BFR540,235 Datasheet - Page 5

• Manufacturer Part Number: BFR540,235
• Description: TRANS NPN 15V 120MA 9GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR540,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 250
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 120 mA
• Power Dissipation: 500 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Philips Semiconductors
9397 750 13398
Product data sheet
Fig 3. Feedback capacitance as a function of
Fig 5. Gain as a function of collector current.
(pF)
gain
(dB)
C
re
0.8
0.6
0.4
0.2
25
20
15
10
1
0
5
0
I
collector-base voltage.
V
C
0
0
CE
= 0 A; f = 1 MHz.
MSG
= 8 V; f = 900 MHz.
20
4
G
G
max
UM
40
8
V
I
C
CB
(mA)
(V)
mra688
mra690
Rev. 05 — 1 September 2004
12
60
Fig 4. Transition frequency as a function of collector
Fig 6. Gain as a function of collector current.
(GHz)
gain
(dB)
f
T
12
25
20
15
10
8
4
0
5
0
10
T
current.
V
0
amb
CE
1
= 8 V; f = 2 GHz.
= 25 C; f = 1 GHz.
20
1
NPN 9 GHz wideband transistor
G
G
max
UM
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10
40
V
CE
I
I
C
C
= 8 V
BFR540
(mA)
(mA)
4 V
mra689
mra691
10
60
2
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