BFR540,235 NXP Semiconductors, BFR540,235 Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
BFR540,235
Manufacturer Part Number
BFR540,235
Description
TRANS NPN 15V 120MA 9GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR540215.pdf
(13 pages)
Specifications of BFR540,235
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2.4dB @ 900MHz
Power - Max
500mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 40mA, 8V
Current - Collector (ic) (max)
120mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
100
Dc Current Gain Hfe Max
250
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
120 mA
Power Dissipation
500 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Philips Semiconductors
9397 750 13398
Product data sheet
Fig 3. Feedback capacitance as a function of
Fig 5. Gain as a function of collector current.
(pF)
gain
(dB)
C
re
0.8
0.6
0.4
0.2
25
20
15
10
1
0
5
0
I
collector-base voltage.
V
C
0
0
CE
= 0 A; f = 1 MHz.
MSG
= 8 V; f = 900 MHz.
20
4
G
G
max
UM
40
8
V
I
C
CB
(mA)
(V)
mra688
mra690
Rev. 05 — 1 September 2004
12
60
Fig 4. Transition frequency as a function of collector
Fig 6. Gain as a function of collector current.
(GHz)
gain
(dB)
f
T
12
25
20
15
10
8
4
0
5
0
10
T
current.
V
0
amb
CE
1
= 8 V; f = 2 GHz.
= 25 C; f = 1 GHz.
20
1
NPN 9 GHz wideband transistor
G
G
max
UM
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10
40
V
CE
I
I
C
C
= 8 V
BFR540
(mA)
(mA)
4 V
mra689
mra691
10
60
2
5 of 13