BFR540,235 NXP Semiconductors, BFR540,235 Datasheet - Page 7
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BFR540,235
Manufacturer Part Number
BFR540,235
Description
TRANS NPN 15V 120MA 9GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR540215.pdf
(13 pages)
Specifications of BFR540,235
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2.4dB @ 900MHz
Power - Max
500mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 40mA, 8V
Current - Collector (ic) (max)
120mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
100
Dc Current Gain Hfe Max
250
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
120 mA
Power Dissipation
500 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Philips Semiconductors
9397 750 13398
Product data sheet
Fig 11. Noise circle figure; f = 900 MHz.
Fig 12. Noise circle figure; f = 2000 MHz.
Z
Z
o
o
= 50 ; V
= 50 ; V
stability
circle
pot. unst.
region
180
180
CE
CE
= 8 V; I
= 8 V; I
Rev. 05 — 1 September 2004
0
0
G
max
135
135
135
135
0.2
0.2
0.2
0.2
= 7.8 dB
C
C
MS
= 10 mA; f = 900 MHz.
= 10 mA; f = 2000 MHz.
0.2
0.2
0.5
0.5
0.5
0.5
F
F = 3 dB
G = 7 dB
min
F = 2 dB
F = 1.5 dB
OPT
= 2.1 dB
F = 2.5 dB
0.5
0.5
F
min
F = 3 dB
G = 6 dB
= 1.3 dB
OPT
F = 4 dB
90
90
90
90
1
1
G = 5 dB
1
1
1
1
2
2
NPN 9 GHz wideband transistor
2
2
2
2
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5
5
45
45
45
45
10
10
5
5
5
5
mra700
mra701
0
0
BFR540
1.0
0.8
0.6
0.4
0.2
0
1.0
1.0
0.8
0.6
0.4
0.2
0
1.0
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