BFG67,235 NXP Semiconductors, BFG67,235 Datasheet - Page 6

• Manufacturer Part Number: BFG67,235
• Description: TRANS RF NPN 8GHZ 10V SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG67,235

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 380mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 50 mA
• Power Dissipation: 380 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 8 GHz wideband transistors
V
G
MSG = maximum stable gain;
G
V
G
MSG = maximum stable gain;
G
CE
CE
UM
max
UM
max
gain
(dB)
gain
(dB)
= 8 V; I
= 8 V; I
50
50
40
30
20
10
40
30
20
10
= maximum unilateral power gain;
= maximum unilateral power gain;
= maximum available gain.
= maximum available gain.
0
0
10
10
Fig.10 Gain as a function of frequency.
Fig.8 Gain as a function of frequency.
C
C
= 5 mA.
= 30 mA.
10
10
MSG
2
2
G UM
MSG
G UM
10
10
3
3
G max
f (MHz)
f (MHz)
G max
MBB305
MBB307
10
10
Rev. 05 - 23 November 2007
4
4
handbook, halfpage
handbook, halfpage
V
G
MSG = maximum stable gain;
G
V
CE
CE
(dB)
UM
max
gain
(dB)
Fig.11 Minimum noise figure as a function of
F
= 8 V; I
= 8 V.
50
= maximum unilateral power gain;
40
30
20
10
= maximum available gain.
4
3
2
0
0
1
10
1
Fig.9 Gain as a function of frequency.
BFG67; BFG67/X; BFG67/XR
C
= 15 mA.
collector current.
10
2
MSG
G UM
10
10
I
C
3
Product specification
(mA)
f (MHz)
900 MHz
500 MHz
f = 2 GHz
1 GHz
G max
MBB308
MBB306
6 of 14
100
10
4