BFG67,235 NXP Semiconductors, BFG67,235 Datasheet - Page 8

• Manufacturer Part Number: BFG67,235
• Description: TRANS RF NPN 8GHZ 10V SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG67,235

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 380mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 50 mA
• Power Dissipation: 380 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
BFG67/X
Noise Parameters
BFG67/X
Noise Parameters
Average Gain Parameters
1000
1.3
2000
2.2
12
F
(dB)
F
(dB)
NPN 8 GHz wideband transistors
(MHz)
(MHz)
G
min
min
(dB)
MAX
f
f
0.375
0.391
(mag)
(mag)
Gamma (opt)
Gamma (opt)
8
8
0.839
(mag)
V
V
(V)
(V)
Gamma (max)
CE
CE
65.9
136.5
(ang)
(ang)
5
5
170
(ang)
(mA)
(mA)
0.304
0.184
R
R
I
I
C
C
n
n
/50
/50
Z
Z
O
O
= 50 .
= 50 .
Rev. 05 - 23 November 2007
+ j
– j
j
j
0
0
0.2
0.2
0.2
0.2
G max
12dB
0.5
0.5
0.2
0.5
0.5
0.2
11 dB
stability
Fig.14 Noise circle figure.
Fig.15 Noise circle figure.
circle
4 dB
F min 2.2 dB
0.5
OPT
0.5
10 dB
3 dB
BFG67; BFG67/X; BFG67/XR
9 dB
8 dB
2 dB
F min
1
1
1
1
1
1
OPT
=1.3 dB
3 dB
2
2
4 dB
5 dB
2
2
5
2
2
5
Product specification
10
10
MBB316
MBB315
5
5
5
5
10
10
10
10
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