BFU690F,115 NXP Semiconductors, BFU690F,115 Datasheet

TRANSISTOR NPN SOT343F

BFU690F,115

Manufacturer Part Number
BFU690F,115
Description
TRANSISTOR NPN SOT343F
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFU690F,115

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5.5V
Frequency - Transition
18GHz
Noise Figure (db Typ @ F)
0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz
Gain
15.5dB ~ 18.5dB
Power - Max
230mW
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 20mA, 2V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
SOT-343F
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
5.5 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
70 mA
Power Dissipation
230 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
90
Gain Bandwidth Product Ft
18 GHz
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
1. Product profile
CAUTION
1.1 General description
1.2 Features and benefits
1.3 Applications
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT343F package.
BFU690F
NPN wideband silicon RF transistor
Rev. 1 — 16 December 2010
Low noise high linearity microwave transistor
High output third-order intercept point 34 dBm at 1.8 GHz
40 GHz f
Ka band oscillators DRO’s
C-band high output buffer amplifier
ZigBee
LTE, cellular, UMTS
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
T
silicon technology
Product data sheet

Related parts for BFU690F,115

BFU690F,115 Summary of contents

Page 1

BFU690F NPN wideband silicon RF transistor Rev. 1 — 16 December 2010 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive ...

Page 2

... NXP Semiconductors 1.4 Quick reference data Table 1. Symbol Parameter V CBO V CEO V EBO tot CBS p(max L(1dB) [ the temperature at the solder point of the emitter lead. sp [2] G p(max) 2. Pinning information Table 2. Pin Ordering information Table 3. Type number BFU690F BFU690F Product data sheet Quick reference data ...

Page 3

... NXP Semiconductors 4. Marking Table 4. Type number BFU690F 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot T stg the temperature at the solder point of the emitter lead Thermal characteristics Table 6. Symbol R th(j-sp) Fig 1. ...

Page 4

... NXP Semiconductors 7. Characteristics Table 7. Characteristics  unless otherwise specified j Symbol Parameter V collector-base breakdown voltage (BR)CBO V collector-emitter breakdown voltage (BR)CEO I collector current C I collector-base cut-off current CBO h DC current gain FE C collector-emitter capacitance CES C emitter-base capacitance EBS C collector-base capacitance CBS f transition frequency ...

Page 5

... NXP Semiconductors (mA C. T amb = 550 A ( 500 A ( 450 A ( 400 A ( 350 A ( 300 A ( 250 A ( 200 A ( 150 A ( 100 A (10 Fig 2. Collector current as a function of collector-emitter voltage; typical values BFU690F Product data sheet 001aam833 (1) (2) (3) (4) (5) (6) ...

Page 6

... NXP Semiconductors 600 C CBS (fF) 400 200  MHz, T amb Fig 4. Collector-base capacitance as a function of collector-base voltage; typical values = 25  amb ( 1.5 GHz ( 1.8 GHz ( 2.4 GHz Fig 6. Gain as a function of collector current; typical value BFU690F Product data sheet 001aam835 fT (GHz (V) CB Fig 5 ...

Page 7

... NXP Semiconductors 40 G (dB MSG G p(max |S21 mA amb Fig 7. Gain as a function of frequency; typical values 1.0 NF min (dB) 0.8 0.6 0.4 0  amb ( 2.4 GHz ( 1.8 GHz ( 1.5 GHz Fig 9. Minimum noise figure as a function of collector current; typical values BFU690F Product data sheet ...

Page 8

... NXP Semiconductors 8. Package outline Plastic surface-mounted flat pack package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions) A UNIT max 0.75 0.4 0.7 0.25 mm 0.65 0.3 0.5 0.10 OUTLINE VERSION IEC SOT343F Fig 11. Package outline SOT343F BFU690F Product data sheet scale 2.2 1 ...

Page 9

... NXP Semiconductors 9. Abbreviations Table 8. Acronym DC DRO Ka LTE NPN RF UMTS 10. Revision history Table 9. Revision history Document ID Release date BFU690F v.1 20101216 BFU690F Product data sheet Abbreviations Description Direct Current Dielectric Resonator Oscillator Kurtz above Long Term Evolution Negative-Positive-Negative Radio Frequency Universal Mobile Telecommunications System ...

Page 10

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...

Page 11

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any 12. Contact information For more information, please visit: ...

Page 12

... NXP Semiconductors 13. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 Legal information ...

Related keywords