BFU690F,115 NXP Semiconductors, BFU690F,115 Datasheet - Page 7

• Manufacturer Part Number: BFU690F,115
• Description: TRANSISTOR NPN SOT343F
• Manufacturer: NXP Semiconductors

Specifications of BFU690F,115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 18GHz
• Noise Figure (db Typ @ F): 0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz
• Gain: 15.5dB ~ 18.5dB
• Power - Max: 230mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 20mA, 2V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5.5 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 70 mA
• Power Dissipation: 230 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 90
• Gain Bandwidth Product Ft: 18 GHz
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BFU690F
Product data sheet
Fig 7.
Fig 9.
NF
(dB)
(dB)
G
(1) f = 2.4 GHz
(2) f = 1.8 GHz
(3) f = 1.5 GHz
min
1.0
0.8
0.6
0.4
0.2
40
30
20
10
0
0
10
0
V
Gain as a function of frequency; typical values
V
Minimum noise figure as a function of
collector current; typical values
CE
CE
|S21|
= 1 V; I
= 2 V; T
15
MSG
2
2
C
20
amb
= 10 mA; T
= 25 C.
4
25
G
amb
p(max)
30
6
= 25 C.
35
I
All information provided in this document is subject to legal disclaimers.
8
C
001aam838
001aam840
f (GHz)
40
(mA)
(1)
(2)
(3)
Rev. 1 — 16 December 2010
10
45
Fig 8.
Fig 10. Minimum noise figure as a function of
NF
(dB)
(dB)
G
min
1.0
0.8
0.6
0.4
0.2
40
30
20
10
0
0
0
0
V
Gain as a function of frequency; typical values
V
frequency; typical values
CE
CE
|S21|
= 1 V; I
= 2 V; I
MSG
2
2
NPN wideband silicon RF transistor
C
C
= 60 mA; T
= 15 mA; T
1
4
G
p(max)
amb
amb
6
= 25 C.
= 25 C.
2
BFU690F
© NXP B.V. 2010. All rights reserved.
f (GHz)
8
001aam839
001aam841
f (GHz)
10
3
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