BFU690F,115 NXP Semiconductors, BFU690F,115 Datasheet - Page 6

• Manufacturer Part Number: BFU690F,115
• Description: TRANSISTOR NPN SOT343F
• Manufacturer: NXP Semiconductors

Specifications of BFU690F,115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 18GHz
• Noise Figure (db Typ @ F): 0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz
• Gain: 15.5dB ~ 18.5dB
• Power - Max: 230mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 20mA, 2V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5.5 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 70 mA
• Power Dissipation: 230 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 90
• Gain Bandwidth Product Ft: 18 GHz
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BFU690F
Product data sheet
Fig 4.
Fig 6.
C
(fF)
CBS
(1) f = 1.5 GHz
(2) f = 1.8 GHz
(3) f = 2.4 GHz
600
400
200
0
0
f = 1 MHz, T
Collector-base capacitance as a function of
collector-base voltage; typical values
V
Gain as a function of collector current; typical value
CE
= 1 V; T
amb
amb
4
= 25 C.
= 25 C.
(dB)
8
G
25
20
15
10
5
0
V
0
All information provided in this document is subject to legal disclaimers.
CB
001aam835
(V)
MSG
Rev. 1 — 16 December 2010
20
12
40
Fig 5.
60
(GHz)
fT
25
20
15
10
5
0
G
0
p(max)
V
Transition frequency as a function of collector
current; typical values
80
CE
001aam837
I
(1)
(2)
(3)
C
= 1 V; f = 2 GHz; T
(mA)
20
100
NPN wideband silicon RF transistor
40
amb
60
= 25 C.
BFU690F
© NXP B.V. 2010. All rights reserved.
80
001aam836
I
C
(mA)
100
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