BFU690F,115 NXP Semiconductors, BFU690F,115 Datasheet - Page 8
![TRANSISTOR NPN SOT343F](/photos/16/0/160096/sot343_sml.jpg)
BFU690F,115
Manufacturer Part Number
BFU690F,115
Description
TRANSISTOR NPN SOT343F
Manufacturer
NXP Semiconductors
Datasheet
1.BFU690F115.pdf
(12 pages)
Specifications of BFU690F,115
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5.5V
Frequency - Transition
18GHz
Noise Figure (db Typ @ F)
0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz
Gain
15.5dB ~ 18.5dB
Power - Max
230mW
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 20mA, 2V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
SOT-343F
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
5.5 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
70 mA
Power Dissipation
230 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
90
Gain Bandwidth Product Ft
18 GHz
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
8. Package outline
Fig 11. Package outline SOT343F
BFU690F
Product data sheet
Plastic surface-mounted flat pack package; reverse pinning; 4 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT343F
max
0.75
0.65
A
0.4
0.3
b
w
p
M
A
0.7
0.5
b
1
3
2
IEC
b
0.25
0.10
p
c
y
2.2
1.8
D
e
D
1
e
1.35
1.15
JEDEC
E
All information provided in this document is subject to legal disclaimers.
b
1
REFERENCES
1.3
e
0
Rev. 1 — 16 December 2010
4
1
1.15
e
1
A
w
JEITA
H
2.2
2.0
M
E
scale
A
1
0.48
0.38
L
p
0.2
w
2 mm
0.1
y
A
NPN wideband silicon RF transistor
detail X
H
PROJECTION
E
EUROPEAN
E
L
p
c
BFU690F
© NXP B.V. 2010. All rights reserved.
X
ISSUE DATE
05-07-12
06-03-16
SOT343F
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