BFU690F,115 NXP Semiconductors, BFU690F,115 Datasheet - Page 5

• Manufacturer Part Number: BFU690F,115
• Description: TRANSISTOR NPN SOT343F
• Manufacturer: NXP Semiconductors

Specifications of BFU690F,115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 18GHz
• Noise Figure (db Typ @ F): 0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz
• Gain: 15.5dB ~ 18.5dB
• Power - Max: 230mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 20mA, 2V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5.5 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 70 mA
• Power Dissipation: 230 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 90
• Gain Bandwidth Product Ft: 18 GHz
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BFU690F
Product data sheet
Fig 2.
(mA)
(10) I
I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
C
80
60
40
20
0
0
T
collector-emitter voltage; typical values
Collector current as a function of
B
B
B
B
B
B
B
B
B
B
amb
= 550 A
= 500 A
= 450 A
= 400 A
= 350 A
= 300 A
= 250 A
= 200 A
= 150 A
= 100 A
= 25 C.
1
2
3
All information provided in this document is subject to legal disclaimers.
4
001aam833
(10)
V
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
CE
(V)
Rev. 1 — 16 December 2010
5
Fig 3.
h
FE
200
150
100
50
0
0
V
DC current gain as a function of collector
current; typical values
CE
= 2 V; T
20
NPN wideband silicon RF transistor
amb
= 25 C.
40
60
BFU690F
© NXP B.V. 2010. All rights reserved.
80
001aam834
I
C
(mA)
100
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