BFU690F,115 NXP Semiconductors, BFU690F,115 Datasheet - Page 4

• Manufacturer Part Number: BFU690F,115
• Description: TRANSISTOR NPN SOT343F
• Manufacturer: NXP Semiconductors

Specifications of BFU690F,115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 18GHz
• Noise Figure (db Typ @ F): 0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz
• Gain: 15.5dB ~ 18.5dB
• Power - Max: 230mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 20mA, 2V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5.5 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 70 mA
• Power Dissipation: 230 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 90
• Gain Bandwidth Product Ft: 18 GHz
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
7. Characteristics
Table 7.
T
[1]
BFU690F
Product data sheet
Symbol
V
V
I
I
h
C
C
C
f
G
s
NF
G
P
IP3
C
CBO
T
j
FE
(BR)CBO
(BR)CEO
21
L(1dB)
CES
EBS
CBS
p(max)
ass
= 25

2
G
p(max)

C unless otherwise specified
is the maximum power gain, if K > 1. If K < 1 then G
Parameter
collector-base breakdown voltage
collector-emitter breakdown voltage
collector current
collector-base cut-off current
DC current gain
collector-emitter capacitance
emitter-base capacitance
collector-base capacitance
transition frequency
maximum power gain
insertion power gain
noise figure
associated gain
output power at 1 dB gain compression
third-order intercept point
Characteristics
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 December 2010
Conditions
I
I
I
I
V
V
V
I
T
I
I
I
T
I
T
I
T
I
T
C
C
E
C
C
C
C
C
C
C
C
amb
amb
amb
amb
amb
CB
EB
CB
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
= 0 mA; V
= 2.5 A; I
= 1 mA; I
= 20 mA; V
= 60 mA; V
= 60 mA; V
= 60 mA; V
= 15 mA; V
= 15 mA; V
= 70 mA; V
= 70 mA; V
p(max)
= 0.5 V; f = 1 MHz
= 2 V; f = 1 MHz
= 2 V; f = 1 MHz
= 25 C
= 25 C
= 25 C
= 25 C
= 25 C
= MSG.
B
CB
E
= 0 mA
CE
CE
CE
CE
CE
CE
CE
CE
= 0 mA
= 8 V
= 4 V; Z
= 4 V; Z
= 2 V
= 1 V; f = 2 GHz;
= 1 V; T
= 1 V; T
= 2 V; 
= 2 V; 
S
S
amb
amb
S
S
= Z
= Z
= 
= 
NPN wideband silicon RF transistor
= 25 C
= 25 C
L
L
opt
opt
= 50 ;
= 50 ;
;
;
[1]
Min Typ
16
5.5
-
-
90
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BFU690F
© NXP B.V. 2010. All rights reserved.
-
-
70
-
135
527
1699
404
18
22
20.5
17
15
13.5
11
0.60
0.65
0.70
18.5
17.5
15.5
22
22
20
34
34
33
Max Unit
-
-
100
180
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
4 of 12
V
V
mA
nA
fF
fF
fF
GHz
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm