PIC12F1822-I/MF Microchip Technology, PIC12F1822-I/MF Datasheet - Page 345

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PIC12F1822-I/MF

Manufacturer Part Number
PIC12F1822-I/MF
Description
IC, 8BIT MCU, PIC12, 32MHZ, DFN-8
Manufacturer
Microchip Technology
Series
PIC® XLP™ 12Fr

Specifications of PIC12F1822-I/MF

Controller Family/series
PIC12
No. Of I/o's
6
Eeprom Memory Size
256Byte
Ram Memory Size
128Byte
Cpu Speed
32MHz
No. Of Timers
3
Core Size
8 Bit
Program Memory Size
3.5KB
Core Processor
PIC
Speed
32MHz
Connectivity
I²C, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
6
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
8-DFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PIC12F1822-I/MF
Manufacturer:
ALLEGRO
Quantity:
1 001
Part Number:
PIC12F1822-I/MF
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
29.5
 2010 Microchip Technology Inc.
DC CHARACTERISTICS
D110
D111
D112
D113
D114
D115
D116
D117
D118
D119
D120
D121
D122
D123
D124
Note 1:
Param
No.
2:
3:
4:
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
Memory Programming Requirements
V
I
V
I
I
E
V
T
T
T
E
V
T
T
DDP
PPPGM
DDPGM
Sym.
RETD
REF
IW
RETD
PEW
DEW
IHH
D
DRW
P
PR
only and are not tested.
Self-write and Block Erase.
Refer to Section 11.2 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
Required only if single-supply programming is disabled.
The MPLAB ICD 2 does not support variable V
placed between the ICD 2 and target system when programming or debugging with the ICD 2.
Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
V
V
Current on MCLR/V
Write
Current on V
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
V
Self-timed Write Cycle Time
Characteristic Retention
DD
DD
DD
DD
for Bulk Erase
for Write or Row Erase
for Read/Write
for Read
Characteristic
DD
during Erase/Write
PP
PP
during Erase/
/RA5 pin
(2)
PIC12F/LF1822/16F/LF1823
Preliminary
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  T
100K
Min.
min.
min.
10K
min.
V
V
V
8.0
1M
2.7
40
40
DD
DD
DD
PP
output. Circuitry to limit the ICD 2 V
Typ†
10M
4.0
2
Max.
max.
max.
max.
max.
V
V
V
V
9.0
5.0
2.5
1.0
5.0
10
DD
DD
DD
DD
Units
Year
Year
E/W
E/W
E/W
mA
mA
mA
ms
ms
A
V
V
V
V
V
 +125°C
(Note 3, Note 4)
-40C to +85C
Provided no other
specifications are violated
-40°C to +85°C
-40C to +85C (Note 1)
Provided no other
specifications are violated
PP
voltage must be
Conditions
DS41413A-page 345

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