H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 33

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note: Refer to table(To see Page 22) for the values of the manufacture and device codes.
Rev 0.6 / Oct. 2004
ALE
WE
CLE
I/O
CLE
RE
ALE
CE
I/O
WE
RB
CE
RE
Command
00h or
Code
01h
Signature Command
Read Electronic
90h
cycle 1
Add.N
tWHWL
Figure 27. Read Read A/ Read B Operation AC Waveform
cycle 2
Address N Input
Add.N
Figure 26. Read Electronic Signature AC Waveform
1st Cycle
Address
cycle 3
Add.N
(Read ES Access time)
00h
tWHBL
tWHBH
tALLRL1
tBLBH1
cycle 4
Add.N
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
tRLQV
Busy
Man.
code
Data
tALLRL2
Manufacturer and
tRLRH
N
from Address N to Last Byte or Word in Page
Device Code
Data
N+1
Device
code
HY27US(08/16)121M Series
HY27SS(08/16)121M Series
(Read Cycle time)
Data Output
tRLRL
Data
N+2
Don't
Care
Reserved For
Future Use
tEHQZ
tEHBH
tRHBL
tRHQZ
tEHEL
Don't
Care
Data
Last
33