H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 38

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Ready/Busy Signal Electrical Characteristics
Figures 32, 33 and 34 show the electrical characteristics for the Ready/Busy signal. The value required for the resistor
R
where I
maximum value of tr.
Rev 0.6 / Oct. 2004
P
can be calculated using the following equation:
L
is the sum of the input currents of all the devices tied to the Ready/Busy signal. R
ready
Vcc
Figure 34. Ready/Busy AC Waveform
Device
Figure 35. Ready/Busy Load Circuit
Vcc
Vss
tf
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
V
OL
busy
Rp
RB
Open Drain Output
ibusy
HY27US(08/16)121M Series
HY27SS(08/16)121M Series
tr
V
OH
P
max is determined by the
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