H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 37

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

System Interface Using CE don’t care
To simplify system interface, CE may be deasserted during data loading or sequential data-reading as shown below. So, it is possible
to connect NAND Flash to a microprocessor. The only function that was removed from standard NAND Flash to make CE don't care
read operation was disabling of the automatic sequential read function.
Rev 0.6 / Oct. 2004
I/Ox
CLE
ALE
I/Ox
CLE
WE
ALE
R/B
CE
WE
CE
RE
00h
80h
Start Add(4Cycle)
Start Add(4Cycle)
If sequential row read enabled,
CE must be held low during tR.
Figure 32. Program Operation with CE don’t-care
Figure 33. Read Operation with CE don’t-care.
tR
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Data Input
CE don't-care
HY27US(08/16)121M Series
HY27SS(08/16)121M Series
CE don't-care
Data Output(sequential)
.
Data Input
10h
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