H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 39

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev 0.6 / Oct. 2004
Figure 36. Resistor Value Waveform Timings for Ready/Busy Signal
400
300
200
100
400
300
200
100
0
0
1
1
30
1.7
1.7
100
2.4
3.6
tf
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
2
Vcc=1.8, CL=30pF
Vcc=3.3, CL=100pF
2
60
0.85
1.7
200
1.2
3.6
Rp(KΩ)
Rp(KΩ)
ibusy
3
3
0.57
1.7
90
0.8
3.6
300
HY27US(08/16)121M Series
HY27SS(08/16)121M Series
tr
400
4
4
120
1.7
0.43
3.6
4
3
2
1
0.6
4
3
2
1
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