H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 6

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev 0.6 / Oct. 2004
Figure 5. 63-FBGA Contactions, x8 Device (Top view through package)
A
B
C
D
E
F
G
H
J
K
L
M
A
B
C
D
E
F
G
H
J
K
L
M
Figure 6. 63-FBGA Contactions, x16 Device (Top view through package)
1
NC
NC
NC
NC
1
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
2
2
3
3
WP
NC
NC
NC
NC
VSS
I/O8
I/O0
NC
NC
WP
NC
NC
NC
NC
VSS
ALE
I/O0
4
4
I/O1
I/O2
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
4
4
ALE
I/O1
I/O9
RE
NC
NC
NC
I/O2
RE
NC
NC
NC
VSS
CLE
I/O10
5
VSS
I/O11
I/O3
NC
5
CLE
I/O3
NC
NC
NC
NC
NC
NC
NC
6
I/O4
VCC
6
I/O12
CE
I/O5
NC
NC
NC
NC
VCC
I/O4
NC
CE
NC
NC
NC
WE
I/O5
I/O14
7
I/O6
I/O13
I/O7
NC
NC
WE
NC
NC
NC
7
I/O6
NC
NC
NC
VCC
I/O15
I/O7
RB
VSS
8
NC
NC
VCC
NC
NC
RB
VSS
8
NC
NC
NC
NC
HY27US(08/16)121M Series
HY27SS(08/16)121M Series
NC
NC
9
NC
NC
9
NC
NC
NC
NC
NC
NC
10
NC
NC
10
NC
NC
NC
NC
6