H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 42

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note: Drawing is not to scale.
Table 17: 48-WSOP1 - 48-lead Plastic Thin Small Outline, 12 x 17mm, Package Mechanical Data
Rev 0.6 / Oct. 2004
Symbol
FD1
FE1
D1
D2
FD
SD
A1
A2
E1
E2
FE
SE
D
A
b
E
e
Figure 39. 63-FBGA - 8.5 x 15mm, 6x8 ball array 0.8mm pitch, Pakage Outline
14.90
1.00
0.21
0.79
0.40
8.40
Min
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
millimeters
15.00
1.10
0.26
0.84
0.45
8.50
4.00
7.20
5.60
8.80
0.80
2.25
0.65
4.70
3.10
0.40
0.40
Typ
HY27US(08/16)121M Series
HY27SS(08/16)121M Series
15.10
Max
1.20
0.31
0.89
0.50
8.60
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