H27US08121B-TPCB HYNIX SEMICONDUCTOR, H27US08121B-TPCB Datasheet - Page 35

• Manufacturer Part Number: H27US08121B-TPCB
• Description: MEMORY, FLASH NAND 512MB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27US08121B-TPCB

• Memory Size: 512Mbit
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Memory Type: Flash - NAND
• Memory Configuration: 64M X 8, 32M X 16
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

WE
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I/O
Rev 0.6 / Oct. 2004
Page Program
Setup Code
80h
tWLWL
(Write Cycle time)
cycle 1
Add. N
Address Input
cycle 2
Add. N
Figure 29. Page Program AC Waveform
cycle 3
Add. N
tWLWL
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
N
Data Input
(Program Busy time)
HY27US(08/16)121M Series
HY27SS(08/16)121M Series
tWHBL
Last
tWLWL
Confirm
Code
tBLBH2
10h
Program
Page
Read Status
70h
Register
35
SR0