IXA12IF1200HB IXYS SEMICONDUCTOR, IXA12IF1200HB Datasheet

IGBT,1200V,20A,TO-247

IXA12IF1200HB

Manufacturer Part Number
IXA12IF1200HB
Description
IGBT,1200V,20A,TO-247
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXA12IF1200HB.pdf (6 pages)

Specifications of IXA12IF1200HB

Transistor Type
IGBT
Dc Collector Current
20A
Collector Emitter Voltage Vces
2.1V
Power Dissipation Max
85W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
TO-247
Rohs Compliant
Yes
Power Dissipation Pd
85W
XPT IGBT
Copack
Part number
IXA12IF1200HB
● Easy paralleling due to the positive temperature
● Rugged XPT design (Xtreme light Punch Through)
● Thin wafer technology combined with the XPT design
● SONIC™ diode
I
P
I
I
V
t
t
t
t
E
E
RBSOA
SCSOA
t
I
R
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Symbol
V
V
I
V
Features / Advantages:
IGBT
C25
C
GES
SC
SC
CES
d(on)
d(off)
r
f
CES
GES
tot
CE(sat)
GE(th)
on
off
coefficient of the on-state voltage
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
results in a competitive low VCE(sat)
- fast and soft reverse recovery
- low operating forward voltage
100
thJC
Gon
Definition
Collector emitter voltage
Maximum DC gate voltage
Collector current
Total power dissipation
Collector emitter leakage current
Gate emitter leakage current
Collector emitter saturation voltage
Gate emitter threshold voltage
Total gate charge
Turn-on delay time
Current rise time
Turn-off delay time
Current fall time
Turn-on energy per pulse
Turn-off energy per pulse
Reverse bias safe operation area
Short circuit safe operation area
Short circuit duration
Short circuit current
Thermal resistance juntion to case
V = V
V
I =
I =
V
V
V
R =
Conditions
V
Inductive load
V
V
V
C
C
GE
CE
CE
CE
GE
CEK
CE
CE
GE
G
= 0 V; V = ±20 V
=
=
= ±15 V; R =
=
=
= 0 V
=
0.3
Applications:
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
● Inductive heating, cookers
100
600
9
600
1200
900
Data according to IEC 60747and per diode unless otherwise specified
CES
power supplies
A; V =
15
mA; V
Ω
V; V
V; I =
; V = 0 V
V;
V; V = ±15 V
GE
GE
; non-repetitive
V
GE
C
GE
GE
G
R =
GE
15
G
=
= V
10
100
15
V
100
A
CE
Ω
V; I =
(G) 1
Ω
C
10
C (2)
E (3)
A
T
T
T
T
T
T
T
T
T
T
T
T
C
VJ
VJ
VJ
VJ
VJ
VJ
C
VJ
VJ
VJ
VJ
= 25°C
= 25°C
= 25°C
=
= 25°C
= 25°C
=
= 25°C
=
=
= 125°C
= 125°C
100
125
125
125
● Housing: TO-247
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
I
V
V
Package:
°C
°C
°C
°C
C25
CES
CE(sat)typ
IXA12IF1200HB
min.
5.4
R a t i n g s
=
=
=
typ.
250
100
0.1
1.8
2.1
1.1
1.1
27
70
40
6
1200
max.
preliminary
1200
1.8 V
500
±20
20
0.1
2.1
6.5
1.5
20
13
85
30
10
40
20110330a
A
V
Unit
K/W
mA
mA
mJ
mJ
nC
nA
µs
ns
ns
ns
ns
W
V
V
A
A
V
V
V
A
A

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IXA12IF1200HB Summary of contents

Page 1

... 100 1200 V CEK V = 900 ± Ω 100 ; non-repetitive G Data according to IEC 60747and per diode unless otherwise specified IXA12IF1200HB preliminary C25 1200 CES V 1 CE(sat)typ Package: ● Housing: TO-247 ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant min. typ. max. Unit = 25°C 1200 = 25° ...

Page 2

... IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Conditions T = 25° 100 ° 600 / 250 A/µ Data according to IEC 60747and per diode unless otherwise specified IXA12IF1200HB preliminary Ratings min. typ. max 25°C 1.95 2 125 °C 1.95 VJ 1.3 10 125 °C VJ 350 0.35 1.8 Ratings min ...

Page 3

... IXYS all rights reserved Conditions Part Name Marking on Product IXA12IF1200HB Similar Part Package IXA12IF1200PB TO-220AB (3) IXA12IF1200PC TO-263AB (D2Pak) IXA12IF1200TC TO-268AA (D3Pak) Data according to IEC 60747and per diode unless otherwise specified IXA12IF1200HB Ratings min. typ. -55 -55 0.25 0.8 20 Part number I = IGBT X ...

Page 4

... IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Ø Ø Data according to IEC 60747and per diode unless otherwise specified IXA12IF1200HB D2 P1 Sym. Inches min. max. A 0.185 0.209 A1 0.087 0.102 D1 A2 0.059 0.098 D 0.819 0.845 20 ...

Page 5

... I [A] C Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved = 125° off [mJ Data according to IEC 60747and per diode unless otherwise specified IXA12IF1200HB 125° [ [V] CE Fig ...

Page 6

... IXYS all rights reserved Q rr [µC] 2.0 2.5 3 [ns] 400 450 500 400 450 500 vs. di /dt (125°C) rec F Data according to IEC 60747and per diode unless otherwise specified IXA12IF1200HB 2.4 2.0 1.6 1.2 0.8 0.4 0.0 200 250 300 350 400 di /dt [A/µ versus ...

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