IXA12IF1200HB IXYS SEMICONDUCTOR, IXA12IF1200HB Datasheet - Page 5

• Manufacturer Part Number: IXA12IF1200HB
• Description: IGBT,1200V,20A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA12IF1200HB

• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 85W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 85W

IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
[A]
[A]
[mJ]
I
I
C
C
E
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20
16
12
20
16
12
8
4
0
8
4
0
0
5
0
Fig. 5 Typ. switching energy vs. collector current
Fig. 1 Typ. output characteristics
Fig. 3 Typ. tranfer characteristics
V
R
V
V
T
GE
CE
GE
VJ
G
T
6
= 15 V
= 100
VJ
= 125°C
= 600 V
= ±15 V
4
= 125°C
7
1
T
VJ
8
V
8
V
= 25°C
CE
I
C
GE
T
[A]
[V]
VJ
9
[V]
12
= 25°C
2
T
10 11 12 13
VJ
= 125°C
16
3
20
E
E
off
on
Data according to IEC 60747and per diode unless otherwise specified
[mJ]
E
[A]
V
I
[V]
C
GE
2.0
1.6
1.2
0.8
0.4
0.0
20
16
12
20
15
10
Fig. 6 Typ. switching energy vs. gate resistance
8
4
0
5
0
80
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. turn-on gate charge
T
I
V
V
T
C
VJ
I
V
C
VJ
CE
GE
=
CE
= 125°C
= 125°C
= 600 V
= ±15 V
= 600 V
= 10 A
1
120
10 A
10
IXA12IF1200HB
V
GE
R
= 15 V
2
Q
160
V
17 V
19 V
G
G
CE
[Ω]
[nC]
20
[V]
3
200
preliminary
30
4
E
E
20110330a
11 V
13 V
9 V
on
off
240