IXA12IF1200HB IXYS SEMICONDUCTOR, IXA12IF1200HB Datasheet - Page 3

• Manufacturer Part Number: IXA12IF1200HB
• Description: IGBT,1200V,20A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA12IF1200HB

• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 85W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 85W

Symbol
T
T
R
Weight
M
F
IXYS reserves the right to change limits, conditions and dimensions.
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C
Package TO-247
VJ
stg
thCH
D
Marking on product
Assembly Code
Assembly Line
DateCode
Logo
Definition
Virtual junction temperature
Storage temperature
Thermal resistance case to heatsink
Mounting torque
Mounting force with clip
Product Marking
YYWWZ
000000
abcdef
Standard
Ordering
IXA 12 IF 1200 HB
Part Name
IXA12IF1200PB
IXA12IF1200PC
IXA12IF1200TC
Similar Part
Conditions
Marking on Product
IXA12IF1200HB
TO-220AB (3)
TO-263AB (D2Pak)
TO-268AA (D3Pak)
Data according to IEC 60747and per diode unless otherwise specified
Package
Delivering Mode
Voltage class
1200
1200
1200
Tube
Part number
1200
HB
Base Qty Code Key
12
IF
X
A
I
=
=
=
=
=
=
=
30
IGBT
XPT IGBT
Gen 1 / std
Current Rating [A]
Copack
Reverse Voltage [V]
TO-247AD (3)
IXA12IF1200HB
508453
min.
-55
-55
0.8
20
Ratings
typ.
0.25
6
max.
preliminary
150
150
120
1.2
20110330a
Unit
K/W
Nm
°C
°C
N
g