IXGP30N120B3 IXYS SEMICONDUCTOR, IXGP30N120B3 Datasheet - Page 2

• Manufacturer Part Number: IXGP30N120B3
• Description: IGBT,1200V,30A,TO-220
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGP30N120B3

• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 3.5V
• Power Dissipation Max: 300W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220
• Rohs Compliant: Yes
• Power Dissipation Pd: 300W

Symbol
(T
g
C
C
C
Q
Q
Q
t
t
E
t
E
t
t
E
t
t
E
R
R
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
t
d(on)
ri
fi
d(on)
ri
d(off)
fi
fs
d(off)
on
off
on
off
ies
oes
res
thJC
thCS
thCS
g
ge
gc
J
= 25°C, Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
TO-263 (IXGA) Outline
TO-220
TO-247
I
V
I
Inductive load, T
I
V
Notes 2
Inductive load, T
I
V
Notes 2
Test Conditions
C
C
C
C
CE
CE
CE
= 30A, V
= 30A,V
= 30A, V
= 25V, V
= 30A, V
= 0.8 • V
= 0.8 • V
GE
GE
CE
GE
GE
CES
CES
= 15V
= 15V
1. Gate
2. Collector
3. Emitter
4. Collector
= 10V, Note 1
= 0V, f = 1MHz
= 15V, V
, R
,R
Bottom Side
4,835,592
4,881,106
J
G
G
J
= 25° ° ° ° ° C
= 5Ω
= 125° ° ° ° ° C
= 5Ω
CE
4,931,844
5,017,508
5,034,796
= 0.5 • V
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
CES
5,049,961
5,063,307
5,187,117
14.61
Min.
4.06
0.51
1.14
0.40
1.14
8.64
8.00
9.65
6.22
2.54
2.29
1.02
1.27
Millimeter
0
5,237,481
5,381,025
5,486,715
10.41
15.88
Max.
BSC
4.83
0.99
1.40
0.74
1.40
9.65
8.89
8.13
2.79
1.40
1.78
0.13
Characteristic Values
Min.
11
Min.
.160
.020
.045
.016
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
Inches
0
6,162,665
6,259,123 B1
6,306,728 B1
1750
2.16
6.70
5.10
0.50
0.21
Typ.
3.47
204
216
255
120
127
Max.
CE
.190
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.005
19
46
87
15
39
16
37
18
38
(Clamp), T
0.42 °C/W
Max.
200
380
6,404,065 B1
6,534,343
6,583,505
4.0
IXGA30N120B3 IXGP30N120B3
J
°C/W
°C/W
or R
mJ
mJ
mJ
mJ
nC
nC
nC
pF
pF
ns
pF
ns
ns
ns
ns
ns
ns
ns
S
G
.
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-247 (IXGH) AD Outline
TO-220 (IXGP) Outline
1 = Gate
2 = Collector
3 = Emitter
Pins: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
3 - Source
IXGH30N120B3
7,005,734 B2
7,063,975 B2
2 - Drain
4 - Drain
7,157,338B2