IXGP30N120B3 IXYS SEMICONDUCTOR, IXGP30N120B3 Datasheet - Page 4

• Manufacturer Part Number: IXGP30N120B3
• Description: IGBT,1200V,30A,TO-220
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGP30N120B3

• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 3.5V
• Power Dissipation Max: 300W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220
• Rohs Compliant: Yes
• Power Dissipation Pd: 300W

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
1.00
0.10
0.01
24
20
16
12
100
8
4
0
10
0.0001
0
0
f
= 1 MHz
10
5
10
20
Fig. 7. Transconductance
Fig. 9. Capacitance
15
30
0.001
I
C
V
CE
- Amperes
T
J
- Volts
20
= - 40ºC
40
25ºC
125ºC
25
C oes
C res
C ies
Fig. 11. Maximum Transient Thermal Impedance
50
30
60
0.01
35
Pulse Width - Seconds
70
40
70
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
200
0
T
R
dv / dt < 10V / ns
IXGA30N120B3 IXGP30N120B3
300
V
I
I
J
G
C
G
CE
0.1
= 125ºC
10
= 5Ω
= 30A
= 10mA
= 600V
Fig. 10. Reverse-Bias Safe Operating Area
400
20
500
30
Fig. 8. Gate Charge
Q
600
G
- NanoCoulombs
V
40
CE
700
- Volts
1
50
800
IXGH30N120B3
900
60
1000
70
1100
80
1200
10
90