IXGP30N120B3 IXYS SEMICONDUCTOR, IXGP30N120B3 Datasheet - Page 3

• Manufacturer Part Number: IXGP30N120B3
• Description: IGBT,1200V,30A,TO-220
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGP30N120B3

• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 3.5V
• Power Dissipation Max: 300W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220
• Rohs Compliant: Yes
• Power Dissipation Pd: 300W

© 2009 IXYS CORPORATION, All Rights Reserved
8
7
6
5
4
3
2
60
50
40
30
20
10
60
50
40
30
20
10
0
0
6
0.0
0.0
0.5
0.5
7
Fig. 3. Output Characteristics @ T
15A
Fig. 1. Output Characteristics @ T
1.0
1.0
Fig. 5. Collector-to-Emitter Voltage vs.
8
1.5
1.5
30A
Gate-to-Emitter Voltage
9
2.0
2.0
V
CE
V
10
V
I
CE
C
GE
- Volts
= 60A
- Volts
2.5
2.5
- Volts
11
V
GE
V
3.0
3.0
GE
= 15V
13V
11V
= 15V
12
13V
11V
3.5
3.5
J
J
= 125ºC
= 25ºC
13
T
4.0
4.0
7V
9V
J
9V
7V
5V
= 25ºC
14
4.5
4.5
5.0
5.0
15
200
180
160
140
120
100
1.6
1.4
1.2
1.0
0.8
0.6
60
50
40
30
20
10
80
60
40
20
0
0
4.5
-50
0
V
Fig. 2. Extended Output Characteristics @ T
IXGA30N120B3 IXGP30N120B3
GE
5.0
3
= 15V
-25
5.5
6
Fig. 4. Dependence of V
0
6.0
T
9
Fig. 6. Input Admittance
J
JunctionTemperature
= 125ºC
T
J
- 40ºC
25
25ºC
- Degrees Centigrade
6.5
12
V
CE
V
GE
- Volts
7.0
15
50
- Volts
V
I
I
I
GE
C
C
C
= 30A
= 60A
= 15A
= 15V
IXGH30N120B3
7.5
18
75
13V
11V
9V
7V
CE(sat)
8.0
21
100
on
8.5
24
J
= 25ºC
125
9.0
27
150
9.5
30