PSMN7R0-60YS NXP Semiconductors, PSMN7R0-60YS Datasheet - Page 10

• Manufacturer Part Number: PSMN7R0-60YS
• Description: MOSFET,N CH,60V,89A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-60YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 4.95mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN7R0-60YS_2
Product data sheet
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(A)
I
S
80
60
40
20
0
0
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 30 March 2010
T
0.3
j
= 175 °C
N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET
0.6
T
j
0.9
= 25 °C
003aae064
V
SD
(V)
1.2
PSMN7R0-60YS
© NXP B.V. 2010. All rights reserved.
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